Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

A. Wang, S. C. Cheng, J. A. Belot, R. J. McNeely, J. Cheng, B. Marcordes, T. J. Marks, Jiyan Dai, R. P.H. Chang, J. L. Schindler, M. P. Chudzik, C. R. Kannewurf

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4 Citations (Scopus)

Abstract

This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3and ZnkIn2Ok+3films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2(dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.
Original languageEnglish
Pages (from-to)3-10
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume495
Publication statusPublished - 1 Jan 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, United States
Duration: 30 Nov 19974 Dec 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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