Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

A. Wang; S. C. Cheng; J. A. Belot; R. J. McNeely; J. Cheng; B. Marcordes; T. J. Marks; Jiyan Dai; R. P.H. Chang; J. L. Schindler; M. P. Chudzik; C. R. Kannewurf

Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

A. Wang, S. C. Cheng, J. A. Belot, R. J. McNeely, J. Cheng, B. Marcordes, T. J. Marks, Jiyan Dai, R. P.H. Chang, J. L. Schindler, M. P. Chudzik, C. R. Kannewurf

Research output: Journal article publication › Conference article › Academic research › peer-review

5 Citations (Scopus)

Abstract

This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3and ZnkIn2Ok+3films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2(dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

Original language	English
Pages (from-to)	3-10
Number of pages	8
Journal	Materials Research Society Symposium - Proceedings
Volume	495
Publication status	Published - 1 Jan 1998
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, United States Duration: 30 Nov 1997 → 4 Dec 1997

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{ec5b0686dc85486aaa2c9b34b250aa6d,

title = "Metal-organic chemical vapor deposition routes to films of transparent conducting oxides",

abstract = "This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3and ZnkIn2Ok+3films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2(dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.",

author = "A. Wang and Cheng, {S. C.} and Belot, {J. A.} and McNeely, {R. J.} and J. Cheng and B. Marcordes and Marks, {T. J.} and Jiyan Dai and Chang, {R. P.H.} and Schindler, {J. L.} and Chudzik, {M. P.} and Kannewurf, {C. R.}",

year = "1998",

month = jan,

day = "1",

language = "English",

volume = "495",

pages = "3--10",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 30-11-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

AU - Wang, A.

AU - Cheng, S. C.

AU - Belot, J. A.

AU - McNeely, R. J.

AU - Cheng, J.

AU - Marcordes, B.

AU - Marks, T. J.

AU - Dai, Jiyan

AU - Chang, R. P.H.

AU - Schindler, J. L.

AU - Chudzik, M. P.

AU - Kannewurf, C. R.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3and ZnkIn2Ok+3films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2(dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

AB - This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3and ZnkIn2Ok+3films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2(dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

UR - http://www.scopus.com/inward/record.url?scp=0031631621&partnerID=8YFLogxK

M3 - Conference article

SN - 0272-9172

VL - 495

SP - 3

EP - 10

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 30 November 1997 through 4 December 1997

ER -

Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

Abstract

ASJC Scopus subject areas

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