@inproceedings{922740f9f3a449fe99a2a2765429760d,
title = "Metal contact capacitive switch on low-resistivity silicon wafer",
abstract = "This paper describes a DC contact capacitive shunt switch fabricated on low-resistivity silicon substrate. In this switch, the dielectric layer is shifted onto the ground planes of the coplanar waveguide (CPW). The contact between the metal bridge and the center conductor becomes DC contact when the metal bridge is driven down. The down-state capacitance degradation problem is solved. The switch is fabricated on a low-resistivity silicon substrate. This is the first time where a RF MEMS switch can be fabricated on a low-resistivity silicon substrate without any wafer transfer technology. Measurement results show that the insertion loss is lower than 0.4 dB until 26.5 GHz and the isolation is 15 dB at 1 GHz, 26 dB at 10 GHz and 27 dB at 26.5 GHz. The down/up states capacitance ratio is 1000.",
keywords = "Capacitive shunt switch, CPW transmission line, DC contact switch, RF MEMS",
author = "Zhang, {Q. X.} and Yu, {A. B.} and Liu, {A. Q.}",
year = "2005",
month = jun,
doi = "10.1109/SENSOR.2005.1496637",
language = "English",
isbn = "0780389948",
series = "Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05",
pages = "1055--1058",
booktitle = "TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers",
note = "13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 ; Conference date: 05-06-2005 Through 09-06-2005",
}