Mesoscopic phenomena in Au nanocrystal floating gate memory structure

K. C. Chan, P. F. Lee, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)


A resonant tunneling process is demonstrated in the HfAlO/Au nanocrystals/HfAlO trilayer nonvolatile memory (NVM) structure on Si, where the electrons tunnel back and forth to the Au nanocrystals due to the various mesoscopic behaviors. The electron tunneling behavior in this trilayer structure exhibits dissimilar resemblance to those in double-barrier tunnel junctions taking into account of the correlation of Coulomb blockade effect. The observed specific tunneling process is beneficial in studying the interplays of various mesoscopic physics and application of single electron devices into NVM.
Original languageEnglish
Article number113109
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 5 Oct 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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