Mesoscopic phenomena in Au nanocrystal floating gate memory structure

K. C. Chan; P. F. Lee; Jiyan Dai

doi:10.1063/1.3229885

Mesoscopic phenomena in Au nanocrystal floating gate memory structure

K. C. Chan, P. F. Lee, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

6 Citations (Scopus)

Abstract

A resonant tunneling process is demonstrated in the HfAlO/Au nanocrystals/HfAlO trilayer nonvolatile memory (NVM) structure on Si, where the electrons tunnel back and forth to the Au nanocrystals due to the various mesoscopic behaviors. The electron tunneling behavior in this trilayer structure exhibits dissimilar resemblance to those in double-barrier tunnel junctions taking into account of the correlation of Coulomb blockade effect. The observed specific tunneling process is beneficial in studying the interplays of various mesoscopic physics and application of single electron devices into NVM.

Original language	English
Article number	113109
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3229885
Publication status	Published - 5 Oct 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.3229885

http://hdl.handle.net/10397/2454

Cite this

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AB - A resonant tunneling process is demonstrated in the HfAlO/Au nanocrystals/HfAlO trilayer nonvolatile memory (NVM) structure on Si, where the electrons tunnel back and forth to the Au nanocrystals due to the various mesoscopic behaviors. The electron tunneling behavior in this trilayer structure exhibits dissimilar resemblance to those in double-barrier tunnel junctions taking into account of the correlation of Coulomb blockade effect. The observed specific tunneling process is beneficial in studying the interplays of various mesoscopic physics and application of single electron devices into NVM.

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Mesoscopic phenomena in Au nanocrystal floating gate memory structure

Abstract

ASJC Scopus subject areas

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