MEMS deep RIE fabrication process and device characterization

Keyphrases

• Fabrication Methods 100%
• Deep Reactive Ion Etching 100%
• Device Characterization 100%
• Fabrication Device 100%
• Process Characterization 100%
• Notch Effect 100%
• Reactive Ion Etching 66%
• Stiction 66%
• Microstructure 33%
• Aspect Ratio 33%
• Oxides 33%
• Inductively Coupled Plasma 33%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 33%
• Silicon-on-insulator 33%
• Modified Process 33%
• Silicon Layer 33%
• Oxide Coatings 33%
• High Aspect Ratio 33%
• Plasma Etching 33%
• Etch Back 33%
• Microstructure Fabrication 33%
• Lag Effect 33%
• Chemical Release 33%
• Feature Design 33%
• Dry Chemical 33%
• Wet Release 33%
• Footing Effect 33%
• Anisotropic Plasma 33%
• Movable Beam 33%

Engineering

• Deep Reactive Ion Etching 100%
• Microelectromechanical System 100%
• Stiction 66%
• Directional 33%
• Anisotropic 33%
• Etching Process 33%
• Design Feature 33%
• Feature Size 33%
• Silicon on Insulator 33%
• Silicon Layer 33%
• Vapor Deposition 33%
• Chemical Vapor Deposition 33%
• High Aspect Ratio 33%
• Inductively Coupled Plasma 33%
• Aspect Ratio 33%

Material Science

• Reactive Ion Etching 100%
• Microelectromechanical System 100%
• Silicon 75%
• Oxide Coating 25%
• Plasma Etching 25%
• Plasma-Enhanced Chemical Vapor Deposition 25%
• Oxide Compound 25%