Memory switching in amorphous silicon-rich silicon carbide

Memory switching has been observed in simple metal-semiconductor-metal structures containing lightly doped amorphous silicon carbide. In common with switching in other disordered materials, a forming process was used to initiate the switching process. A range of switching effects were found but a particularly interesting transition could be explained by a change in the number of charged defect states in a defect band and the current flowing through them via the Poole-Frenkel effect.