Memory switching in amorphous silicon-rich silicon carbide

J. M. Shannon, Shu Ping Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)

Abstract

Memory switching has been observed in simple metal-semiconductor-metal structures containing lightly doped amorphous silicon carbide. In common with switching in other disordered materials, a forming process was used to initiate the switching process. A range of switching effects were found but a particularly interesting transition could be explained by a change in the number of charged defect states in a defect band and the current flowing through them via the Poole-Frenkel effect.
Original languageEnglish
Pages (from-to)1976-1977
Number of pages2
JournalElectronics Letters
Volume35
Issue number22
DOIs
Publication statusPublished - 28 Oct 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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