Memory effect in polymer brushes containing pendant carbazole groups

Yuyan Wei; Dazhi Gao; Liang Li; Songmin Shang

doi:10.1016/j.polymer.2011.01.044

Memory effect in polymer brushes containing pendant carbazole groups

Yuyan Wei, Dazhi Gao, Liang Li, Songmin Shang

The Hong Kong Polytechnic University

Research output: Journal article publication › Journal article › Academic research › peer-review

13 Citations (Scopus)

Abstract

Poly(9-(2-(4-vinyl(benzyloxy)ethyl)-9H-carbazole)) (PVBEC) brushes, have been successfully prepared on the silicon surfaces via surface-initiated atom transfer radical polymerization (ATRP). Conductance switching at a voltage of about -2.1 V is observed in the memory device based on the PVBEC brushes. The fabricated device shows the good memory characteristics as the ON/OFF current ratio up to 105, and enduring 106read cycles under -1 V pulse voltages. Compared with those of the conventional Si/PVBEC/Al device fabricated by spin-coating, the switch voltage is lower and the ON/OFF current ratio is higher in the volatile Si-g-PVBEC/Al memory device.

Original language	English
Pages (from-to)	1385-1390
Number of pages	6
Journal	Polymer
Volume	52
Issue number	6
DOIs	https://doi.org/10.1016/j.polymer.2011.01.044
Publication status	Published - 10 Mar 2011

Keywords

Atom transfer radical polymerization
Memory effect
Polymer brushes

ASJC Scopus subject areas

Polymers and Plastics
Organic Chemistry

More information

10.1016/j.polymer.2011.01.044

Cite this

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title = "Memory effect in polymer brushes containing pendant carbazole groups",

abstract = "Poly(9-(2-(4-vinyl(benzyloxy)ethyl)-9H-carbazole)) (PVBEC) brushes, have been successfully prepared on the silicon surfaces via surface-initiated atom transfer radical polymerization (ATRP). Conductance switching at a voltage of about -2.1 V is observed in the memory device based on the PVBEC brushes. The fabricated device shows the good memory characteristics as the ON/OFF current ratio up to 105, and enduring 106read cycles under -1 V pulse voltages. Compared with those of the conventional Si/PVBEC/Al device fabricated by spin-coating, the switch voltage is lower and the ON/OFF current ratio is higher in the volatile Si-g-PVBEC/Al memory device.",

keywords = "Atom transfer radical polymerization, Memory effect, Polymer brushes",

author = "Yuyan Wei and Dazhi Gao and Liang Li and Songmin Shang",

year = "2011",

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language = "English",

volume = "52",

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T1 - Memory effect in polymer brushes containing pendant carbazole groups

AU - Wei, Yuyan

AU - Gao, Dazhi

AU - Li, Liang

AU - Shang, Songmin

PY - 2011/3/10

Y1 - 2011/3/10

N2 - Poly(9-(2-(4-vinyl(benzyloxy)ethyl)-9H-carbazole)) (PVBEC) brushes, have been successfully prepared on the silicon surfaces via surface-initiated atom transfer radical polymerization (ATRP). Conductance switching at a voltage of about -2.1 V is observed in the memory device based on the PVBEC brushes. The fabricated device shows the good memory characteristics as the ON/OFF current ratio up to 105, and enduring 106read cycles under -1 V pulse voltages. Compared with those of the conventional Si/PVBEC/Al device fabricated by spin-coating, the switch voltage is lower and the ON/OFF current ratio is higher in the volatile Si-g-PVBEC/Al memory device.

AB - Poly(9-(2-(4-vinyl(benzyloxy)ethyl)-9H-carbazole)) (PVBEC) brushes, have been successfully prepared on the silicon surfaces via surface-initiated atom transfer radical polymerization (ATRP). Conductance switching at a voltage of about -2.1 V is observed in the memory device based on the PVBEC brushes. The fabricated device shows the good memory characteristics as the ON/OFF current ratio up to 105, and enduring 106read cycles under -1 V pulse voltages. Compared with those of the conventional Si/PVBEC/Al device fabricated by spin-coating, the switch voltage is lower and the ON/OFF current ratio is higher in the volatile Si-g-PVBEC/Al memory device.

KW - Atom transfer radical polymerization

KW - Memory effect

KW - Polymer brushes

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U2 - 10.1016/j.polymer.2011.01.044

DO - 10.1016/j.polymer.2011.01.044

M3 - Journal article

SN - 0032-3861

VL - 52

SP - 1385

EP - 1390

JO - Polymer

JF - Polymer

IS - 6

ER -

Memory effect in polymer brushes containing pendant carbazole groups

Abstract

Keywords

ASJC Scopus subject areas

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