Memory characteristics and the tunneling mechanism of Au nanocrystals embedded in a DyScO3high-k gate dielectric layer

K. C. Chan, P. F. Lee, D. F. Li, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

8 Citations (Scopus)

Abstract

DyScO3thin films grown by pulsed-laser deposition have been attempted to serve as a dielectric layer in the Au nanocrystal (NC) floating gate memory structure of DyScO3/Au NCs/DyScO3trilayers on Si. The charging effect of pulsed-laser deposited Au NCs embedded inside the DyScO3thin films is manifested by the significant threshold voltage shift of 4.5 V, i.e. of memory window. The tunneling mechanism in this floating gate memory structure is also studied. These results may provide an alternative approach for utilizing DyScO3in the floating gate memory structure.
Original languageEnglish
Article number025015
JournalSemiconductor Science and Technology
Volume26
Issue number2
DOIs
Publication statusPublished - 1 Feb 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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