Mechanically controllable nonlinear dielectrics

D.L. Ko, M.F. Tsai, J.W. Chen, P.W. Shao, Y.Z. Tan, J.J. Wang, S.Z. Ho, Y.H. Lai, Y.L. Chueh, Y.C. Chen, Din-ping Tsai, L.-Q. Chen, Y.H. Chu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)

Abstract

Strain-sensitive Ba xSr 1−xTiO 3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba 0.5Sr 0.5TiO 3 (BSTO) and ferroelectric BaTiO 3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.

Original languageEnglish
Article numbereaaz3180
JournalScience advances
Volume6
Issue number10
DOIs
Publication statusPublished - 1 Jan 2020

ASJC Scopus subject areas

  • General

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