Mechanically controllable nonlinear dielectrics

D.L. Ko; M.F. Tsai; J.W. Chen; P.W. Shao; Y.Z. Tan; J.J. Wang; S.Z. Ho; Y.H. Lai; Y.L. Chueh; Y.C. Chen; Din-ping Tsai; L.-Q. Chen; Y.H. Chu

doi:10.1126/sciadv.aaz3180

Mechanically controllable nonlinear dielectrics

D.L. Ko, M.F. Tsai, J.W. Chen, P.W. Shao, Y.Z. Tan, J.J. Wang, S.Z. Ho, Y.H. Lai, Y.L. Chueh, Y.C. Chen, Din-ping Tsai, L.-Q. Chen, Y.H. Chu

Research output: Journal article publication › Journal article › Academic research › peer-review

17 Citations (Scopus)

Abstract

Strain-sensitive Ba _xSr _1−xTiO ₃ perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba _0.5Sr _0.5TiO ₃ (BSTO) and ferroelectric BaTiO ₃ (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.

Original language	English
Article number	eaaz3180
Journal	Science advances
Volume	6
Issue number	10
DOIs	https://doi.org/10.1126/sciadv.aaz3180
Publication status	Published - 1 Jan 2020

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10.1126/sciadv.aaz3180

http://hdl.handle.net/10397/82274

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title = "Mechanically controllable nonlinear dielectrics",

abstract = "Strain-sensitive Ba xSr 1−xTiO 3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba 0.5Sr 0.5TiO 3 (BSTO) and ferroelectric BaTiO 3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy. ",

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AU - Ko, D.L.

AU - Tsai, M.F.

AU - Chen, J.W.

AU - Shao, P.W.

AU - Tan, Y.Z.

AU - Wang, J.J.

AU - Ho, S.Z.

AU - Lai, Y.H.

AU - Chueh, Y.L.

AU - Chen, Y.C.

AU - Tsai, Din-ping

AU - Chen, L.-Q.

AU - Chu, Y.H.

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Strain-sensitive Ba xSr 1−xTiO 3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba 0.5Sr 0.5TiO 3 (BSTO) and ferroelectric BaTiO 3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.

AB - Strain-sensitive Ba xSr 1−xTiO 3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba 0.5Sr 0.5TiO 3 (BSTO) and ferroelectric BaTiO 3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.

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IS - 10

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ER -

Mechanically controllable nonlinear dielectrics

Abstract

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