Mechanical characteristics of hydrogen-implanted crystalline silicon after post-implantation annealing

Suet To, Emil V. Jelenković, Lyudmila V. Goncharova, Sing Fai Wong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)

Abstract

Knowing the mechanical properties of single crystal silicon after implantation with hydrogen and annealing are important for “smart cut” process and in improving ultra-precision cutting of silicon. There is limited information on hardness and modulus of such silicon. In this article, the effect of hydrogen implantation dose and post-implantation annealing on silicon hardness and modulus were investigated. Continuous implanted silicon layers, from the surface to the depth of ∼500 nm, were produced. Samples with three different implantation doses and with post-implantation annealing at 350 °C and 400 °C were prepared. Hardness and modulus were obtained through dynamic nanoindentation, while structural properties were evaluated by Rutherford backscattering spectroscopy and high resolution x-ray diffraction. Hardness and modulus were significantly reduced after annealing for the highest implantation dose. With the annealing, the implantation-induced strain had the least relaxation for the lowest implantation dose. The obtained results could be useful for understanding the role of hydrogen in nano-cutting of hydrogen-implanted silicon.

Original languageEnglish
Pages (from-to)40-46
Number of pages7
JournalVacuum
Volume152
DOIs
Publication statusPublished - 1 Jun 2018

Keywords

  • Elastic modulus
  • Hardness
  • High resolution XRD
  • Hydrogen implantation
  • Rutherford Backcattering Spectroscopy
  • Silicon

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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