Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

M. P. Tsang, Chung Wo Ong, N. Chong, C. L. Choy, P. K. Lim, W. W. Hung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)


The hydrogen-free silicon nitride (SiNx) films with x varying from 0 to 1.3 were prepared by sputtering a silicon target with concurrent nitrogen ion assisted at an energy of 250 eV. The composition and structure of the films were investigated by x-ray photoelectron spectroscopy (XPS) and infrared (IR) absorption. The etching rate of the silicon films in buffered hydrofluoric acid (BHF) at room temperature was zero and rose to 7 nm min-1at x≥0.9. The mechanical and etching properties suggested that dual ion beam deposition SiNxfilms are potentially useful materials in microelectromechanical (MEMS) devices.
Original languageEnglish
Pages (from-to)2542-2548
Number of pages7
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Issue number5
Publication statusPublished - 1 Sep 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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