Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

M. P. Tsang; Chung Wo Ong; N. Chong; C. L. Choy; P. K. Lim; W. W. Hung

doi:10.1116/1.1392397

Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

M. P. Tsang, Chung Wo Ong, N. Chong, C. L. Choy, P. K. Lim, W. W. Hung

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

The hydrogen-free silicon nitride (SiNx) films with x varying from 0 to 1.3 were prepared by sputtering a silicon target with concurrent nitrogen ion assisted at an energy of 250 eV. The composition and structure of the films were investigated by x-ray photoelectron spectroscopy (XPS) and infrared (IR) absorption. The etching rate of the silicon films in buffered hydrofluoric acid (BHF) at room temperature was zero and rose to 7 nm min-1at x≥0.9. The mechanical and etching properties suggested that dual ion beam deposition SiNxfilms are potentially useful materials in microelectromechanical (MEMS) devices.

Original language	English
Pages (from-to)	2542-2548
Number of pages	7
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	19
Issue number	5
DOIs	https://doi.org/10.1116/1.1392397
Publication status	Published - 1 Sept 2001

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1392397

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abstract = "The hydrogen-free silicon nitride (SiNx) films with x varying from 0 to 1.3 were prepared by sputtering a silicon target with concurrent nitrogen ion assisted at an energy of 250 eV. The composition and structure of the films were investigated by x-ray photoelectron spectroscopy (XPS) and infrared (IR) absorption. The etching rate of the silicon films in buffered hydrofluoric acid (BHF) at room temperature was zero and rose to 7 nm min-1at x≥0.9. The mechanical and etching properties suggested that dual ion beam deposition SiNxfilms are potentially useful materials in microelectromechanical (MEMS) devices.",

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Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films. / Tsang, M. P.; Ong, Chung Wo; Chong, N. et al.
In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, Vol. 19, No. 5, 01.09.2001, p. 2542-2548.

Research output: Journal article publication › Journal article › Academic research › peer-review

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AU - Ong, Chung Wo

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AU - Lim, P. K.

AU - Hung, W. W.

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Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

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