MCSSim: A memory channel storage simulator

Renhai Chen, Zili Shao, Chia Lin Yang, Tao Li

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Recently, NVDIMM (Non-Volatile Dual In-line Memory Module) is being widely supported by leading hardware design companies, such as IBM. Nevertheless, existing efforts largely focus on NVDIMM specification and fabrication issues, and the potential performance gains brought by NVDIMM are not fully investigated. In this paper, we present a NVDIMM-based simulator called MCSSim to help study the memory channel storage techniques. MCSSim is a cycle-accurate simulator that is elaborated with the consideration of differences between the memory channel interface and the NAND flash memory features. MCSSim is also implemented with the DRAMSim2 [31] simulator thus enabling the simulation of a variety of hybrid memory systems by combining of DRAM DIMM and NVDIMM. We have done some experiments with MCSSim, and the experimental results show the effectiveness of the proposed simulator.
Original languageEnglish
Title of host publication2016 21st Asia and South Pacific Design Automation Conference, ASP-DAC 2016
PublisherIEEE
Pages153-158
Number of pages6
Volume25-28-January-2016
ISBN (Electronic)9781467395694
DOIs
Publication statusPublished - 7 Mar 2016
Event21st Asia and South Pacific Design Automation Conference, ASP-DAC 2016 - Macao, Macao
Duration: 25 Jan 201628 Jan 2016

Conference

Conference21st Asia and South Pacific Design Automation Conference, ASP-DAC 2016
Country/TerritoryMacao
CityMacao
Period25/01/1628/01/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design

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