MBE growth of van der Waals epitaxy using graphene buffer layer

K. K. Leung; W. Wang; Y. Y. Hui; S. F. Wang; W. K. Fong; Shu Ping Lau; Chi Hang Lam; C. Surya

doi:10.1109/ISNE.2013.6512273

MBE growth of van der Waals epitaxy using graphene buffer layer

K. K. Leung, W. Wang, Y. Y. Hui, S. F. Wang, W. K. Fong, Shu Ping Lau, Chi Hang Lam, C. Surya

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104cm-1at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

Original language	English
Title of host publication	ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013
Pages	11-13
Number of pages	3
DOIs	https://doi.org/10.1109/ISNE.2013.6512273
Publication status	Published - 27 May 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 25 Feb 2013 → 26 Feb 2013

Conference

Conference	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	25/02/13 → 26/02/13

ASJC Scopus subject areas

Electrical and Electronic Engineering

More information

10.1109/ISNE.2013.6512273

Cite this

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title = "MBE growth of van der Waals epitaxy using graphene buffer layer",

abstract = "SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104cm-1at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.",

author = "Leung, \{K. K.\} and W. Wang and Hui, \{Y. Y.\} and Wang, \{S. F.\} and Fong, \{W. K.\} and Lau, \{Shu Ping\} and Lam, \{Chi Hang\} and C. Surya",

year = "2013",

month = may,

day = "27",

doi = "10.1109/ISNE.2013.6512273",

language = "English",

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booktitle = "ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

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Leung, KK, Wang, W, Hui, YY, Wang, SF, Fong, WK, Lau, SP , Lam, CH & Surya, C 2013, MBE growth of van der Waals epitaxy using graphene buffer layer. in ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013., 6512273, pp. 11-13, 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, 25/02/13. https://doi.org/10.1109/ISNE.2013.6512273

TY - GEN

T1 - MBE growth of van der Waals epitaxy using graphene buffer layer

AU - Leung, K. K.

AU - Wang, W.

AU - Hui, Y. Y.

AU - Wang, S. F.

AU - Fong, W. K.

AU - Lau, Shu Ping

AU - Lam, Chi Hang

AU - Surya, C.

PY - 2013/5/27

Y1 - 2013/5/27

N2 - SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104cm-1at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

AB - SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104cm-1at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

UR - https://www.scopus.com/pages/publications/84877989280

U2 - 10.1109/ISNE.2013.6512273

DO - 10.1109/ISNE.2013.6512273

M3 - Conference article published in proceeding or book

SP - 11

EP - 13

BT - ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013

T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

MBE growth of van der Waals epitaxy using graphene buffer layer

Abstract

Conference

ASJC Scopus subject areas

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