MBE growth of van der Waals epitaxy using graphene buffer layer

K. K. Leung; W. Wang; Y. Y. Hui; S. F. Wang; W. K. Fong; Shu Ping Lau; Chi Hang Lam; C. Surya

doi:10.1109/ISNE.2013.6512273

MBE growth of van der Waals epitaxy using graphene buffer layer

K. K. Leung
, W. Wang
, Y. Y. Hui
, S. F. Wang
, W. K. Fong
, Shu Ping Lau
, Chi Hang Lam
, C. Surya

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104cm-1at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

Original language	English
Title of host publication	ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013
Pages	11-13
Number of pages	3
DOIs	https://doi.org/10.1109/ISNE.2013.6512273
Publication status	Published - 27 May 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 25 Feb 2013 → 26 Feb 2013

Conference

Conference	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	25/02/13 → 26/02/13

ASJC Scopus subject areas

Electrical and Electronic Engineering

More information

10.1109/ISNE.2013.6512273

Cite this

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title = "MBE growth of van der Waals epitaxy using graphene buffer layer",

abstract = "SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104cm-1at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.",

author = "Leung, \{K. K.\} and W. Wang and Hui, \{Y. Y.\} and Wang, \{S. F.\} and Fong, \{W. K.\} and Lau, \{Shu Ping\} and Lam, \{Chi Hang\} and C. Surya",

year = "2013",

month = may,

day = "27",

doi = "10.1109/ISNE.2013.6512273",

language = "English",

pages = "11--13",

booktitle = "ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

}

Leung, KK, Wang, W, Hui, YY, Wang, SF, Fong, WK, Lau, SP , Lam, CH & Surya, C 2013, MBE growth of van der Waals epitaxy using graphene buffer layer. in ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013., 6512273, pp. 11-13, 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, 25/02/13. https://doi.org/10.1109/ISNE.2013.6512273

TY - GEN

T1 - MBE growth of van der Waals epitaxy using graphene buffer layer

AU - Leung, K. K.

AU - Wang, W.

AU - Hui, Y. Y.

AU - Wang, S. F.

AU - Fong, W. K.

AU - Lau, Shu Ping

AU - Lam, Chi Hang

AU - Surya, C.

PY - 2013/5/27

Y1 - 2013/5/27

N2 - SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104cm-1at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

AB - SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104cm-1at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

UR - https://www.scopus.com/pages/publications/84877989280

U2 - 10.1109/ISNE.2013.6512273

DO - 10.1109/ISNE.2013.6512273

M3 - Conference article published in proceeding or book

SP - 11

EP - 13

BT - ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013

T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

MBE growth of van der Waals epitaxy using graphene buffer layer

Abstract

Conference

ASJC Scopus subject areas

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