MBE growth of van der Waals epitaxy using graphene buffer layer

K. K. Leung, W. Wang, Y. Y. Hui, S. F. Wang, W. K. Fong, Shu Ping Lau, Chi Hang Lam, C. Surya

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104cm-1at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ∼81 cm2V-1s-1was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.
Original languageEnglish
Title of host publicationISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013
Pages11-13
Number of pages3
DOIs
Publication statusPublished - 27 May 2013
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
Duration: 25 Feb 201326 Feb 2013

Conference

Conference2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/TerritoryTaiwan
CityKaohsiung
Period25/02/1326/02/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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