Magnetotransport properties of p -type carbon-doped ZnO thin films

T. S. Herng; Shu Ping Lau; L. Wang; B. C. Zhao; Siu Fung Yu; M. Tanemura; A. Akaike; K. S. Teng

doi:10.1063/1.3176434

Magnetotransport properties of p -type carbon-doped ZnO thin films

T. S. Herng, Shu Ping Lau, L. Wang, B. C. Zhao, Siu Fung Yu, M. Tanemura, A. Akaike, K. S. Teng

Research output: Journal article publication › Journal article › Academic research › peer-review

84 Citations (Scopus)

Abstract

Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO:C films was found to be around 1.35 μB per carbon atom. The ZnO:C films showed p -type conduction with a hole concentration of ∼5× 1017cm-3. In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO:C films. The magnetotransport properties of the ZnO:C suggested that the films possessed charge carrier spin polarization.

Original language	English
Article number	012505
Journal	Applied Physics Letters
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.3176434
Publication status	Published - 20 Jul 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3176434

http://hdl.handle.net/10397/2464

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abstract = "Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO:C films was found to be around 1.35 μB per carbon atom. The ZnO:C films showed p -type conduction with a hole concentration of ∼5× 1017cm-3. In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO:C films. The magnetotransport properties of the ZnO:C suggested that the films possessed charge carrier spin polarization.",

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AU - Herng, T. S.

AU - Lau, Shu Ping

AU - Wang, L.

AU - Zhao, B. C.

AU - Yu, Siu Fung

AU - Tanemura, M.

AU - Akaike, A.

AU - Teng, K. S.

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N2 - Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO:C films was found to be around 1.35 μB per carbon atom. The ZnO:C films showed p -type conduction with a hole concentration of ∼5× 1017cm-3. In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO:C films. The magnetotransport properties of the ZnO:C suggested that the films possessed charge carrier spin polarization.

AB - Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO:C films was found to be around 1.35 μB per carbon atom. The ZnO:C films showed p -type conduction with a hole concentration of ∼5× 1017cm-3. In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO:C films. The magnetotransport properties of the ZnO:C suggested that the films possessed charge carrier spin polarization.

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Magnetotransport properties of p -type carbon-doped ZnO thin films

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