Magnetotransport properties of p -type carbon-doped ZnO thin films

T. S. Herng, Shu Ping Lau, L. Wang, B. C. Zhao, Siu Fung Yu, M. Tanemura, A. Akaike, K. S. Teng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

74 Citations (Scopus)

Abstract

Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO:C films was found to be around 1.35 μB per carbon atom. The ZnO:C films showed p -type conduction with a hole concentration of ∼5× 1017cm-3. In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO:C films. The magnetotransport properties of the ZnO:C suggested that the films possessed charge carrier spin polarization.
Original languageEnglish
Article number012505
JournalApplied Physics Letters
Volume95
Issue number1
DOIs
Publication statusPublished - 20 Jul 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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