Magnetoresistance of spin valve structures based on the full Heusler alloy Co2MnSi

L. J. Singh; Chi Wah Leung; C. Bell; J. L. Prieto; Z. H. Barber

doi:10.1063/1.2213352

Magnetoresistance of spin valve structures based on the full Heusler alloy Co₂MnSi

L. J. Singh, Chi Wah Leung, C. Bell, J. L. Prieto, Z. H. Barber

Research output: Journal article publication › Journal article › Academic research › peer-review

7 Citations (Scopus)

Abstract

Co2MnSi/Cu/Co pseudo-spin-valves (PSVs) have been grown by dc magnetron sputtering from elemental targets onto GaAs(001). The stoichiometric Heusler layer was highly textured, following the [001] orientation of the lattice matched GaAs(001). Hysteresis loops showed independent switching of the magnetization of the two ferromagnetic layers. Transport measurements of the samples were performed in both the current in plane (CIP) and current perpendicular to plane (CPP) geometries. Clear low-field spin valve contributions were observed at 15 K for the CIP PSV, a conventionally patterned mesa CPP device and a CPP device fabricated in the focused ion beam microscope. Analysis of the CPP data did not show the half-metallic behavior of Co2MnSi as expected from theory.

Original language	English
Article number	013910
Journal	Journal of Applied Physics
Volume	100
Issue number	1
DOIs	https://doi.org/10.1063/1.2213352
Publication status	Published - 26 Jul 2006

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2213352

http://hdl.handle.net/10397/111256

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abstract = "Co2MnSi/Cu/Co pseudo-spin-valves (PSVs) have been grown by dc magnetron sputtering from elemental targets onto GaAs(001). The stoichiometric Heusler layer was highly textured, following the [001] orientation of the lattice matched GaAs(001). Hysteresis loops showed independent switching of the magnetization of the two ferromagnetic layers. Transport measurements of the samples were performed in both the current in plane (CIP) and current perpendicular to plane (CPP) geometries. Clear low-field spin valve contributions were observed at 15 K for the CIP PSV, a conventionally patterned mesa CPP device and a CPP device fabricated in the focused ion beam microscope. Analysis of the CPP data did not show the half-metallic behavior of Co2MnSi as expected from theory.",

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AU - Singh, L. J.

AU - Leung, Chi Wah

AU - Bell, C.

AU - Prieto, J. L.

AU - Barber, Z. H.

PY - 2006/7/26

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N2 - Co2MnSi/Cu/Co pseudo-spin-valves (PSVs) have been grown by dc magnetron sputtering from elemental targets onto GaAs(001). The stoichiometric Heusler layer was highly textured, following the [001] orientation of the lattice matched GaAs(001). Hysteresis loops showed independent switching of the magnetization of the two ferromagnetic layers. Transport measurements of the samples were performed in both the current in plane (CIP) and current perpendicular to plane (CPP) geometries. Clear low-field spin valve contributions were observed at 15 K for the CIP PSV, a conventionally patterned mesa CPP device and a CPP device fabricated in the focused ion beam microscope. Analysis of the CPP data did not show the half-metallic behavior of Co2MnSi as expected from theory.

AB - Co2MnSi/Cu/Co pseudo-spin-valves (PSVs) have been grown by dc magnetron sputtering from elemental targets onto GaAs(001). The stoichiometric Heusler layer was highly textured, following the [001] orientation of the lattice matched GaAs(001). Hysteresis loops showed independent switching of the magnetization of the two ferromagnetic layers. Transport measurements of the samples were performed in both the current in plane (CIP) and current perpendicular to plane (CPP) geometries. Clear low-field spin valve contributions were observed at 15 K for the CIP PSV, a conventionally patterned mesa CPP device and a CPP device fabricated in the focused ion beam microscope. Analysis of the CPP data did not show the half-metallic behavior of Co2MnSi as expected from theory.

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Magnetoresistance of spin valve structures based on the full Heusler alloy Co₂MnSi

Abstract

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