Magnetoresistance of Manganite-Cobalt Ferrite Spacerless Junctions

Hon Fai Wong; Kai Wang; Chi Wah Leung; Kin Hung Wong

doi:10.1109/TMAG.2013.2296503

Magnetoresistance of Manganite-Cobalt Ferrite Spacerless Junctions

Hon Fai Wong, Kai Wang, Chi Wah Leung, Kin Hung Wong

Research output: Journal article publication › Journal article › Academic research › peer-review

7 Citations (Scopus)

Abstract

We report the fabrication of heteroepitaxial pseudospin-valve structure using high spin polarization oxides of CoFe2O4(CFO) and La0.7Sr0.3MnO3(LSMO) as ferromagnetic electrodes. Transmission electron microscopy images revealed a 2 nm natural spacer layer at the interface between CFO and LSMO, which decoupled the two layers and permitted the observation of spin-valve effect. These heteroepitaxial spin-valve junctions showed positive magnetoresistive behavior, although CFO and LSMO are known to possess opposite spin polarization coefficients. We suggest that the abnormal magnetoresistive behavior originates from the change of spin polarization coefficient arising from the barrier layer. Our results demonstrated that naturally formed interfacial layers provide a simple route for fabricating all-oxide-based spin-valve junctions.

Original language	English
Article number	6851308
Journal	IEEE Transactions on Magnetics
Volume	50
Issue number	7
DOIs	https://doi.org/10.1109/TMAG.2013.2296503
Publication status	Published - 1 Jul 2014

Keywords

Ferrites
magnetoresistance (MR)
spacerless junction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/TMAG.2013.2296503

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@article{e32c89dd6baa4ad8942516d71672eb03,

title = "Magnetoresistance of Manganite-Cobalt Ferrite Spacerless Junctions",

abstract = "We report the fabrication of heteroepitaxial pseudospin-valve structure using high spin polarization oxides of CoFe2O4(CFO) and La0.7Sr0.3MnO3(LSMO) as ferromagnetic electrodes. Transmission electron microscopy images revealed a 2 nm natural spacer layer at the interface between CFO and LSMO, which decoupled the two layers and permitted the observation of spin-valve effect. These heteroepitaxial spin-valve junctions showed positive magnetoresistive behavior, although CFO and LSMO are known to possess opposite spin polarization coefficients. We suggest that the abnormal magnetoresistive behavior originates from the change of spin polarization coefficient arising from the barrier layer. Our results demonstrated that naturally formed interfacial layers provide a simple route for fabricating all-oxide-based spin-valve junctions.",

keywords = "Ferrites, magnetoresistance (MR), spacerless junction",

author = "Wong, {Hon Fai} and Kai Wang and Leung, {Chi Wah} and Wong, {Kin Hung}",

year = "2014",

month = jul,

day = "1",

doi = "10.1109/TMAG.2013.2296503",

language = "English",

volume = "50",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "IEEE",

number = "7",

}

TY - JOUR

T1 - Magnetoresistance of Manganite-Cobalt Ferrite Spacerless Junctions

AU - Wong, Hon Fai

AU - Wang, Kai

AU - Leung, Chi Wah

AU - Wong, Kin Hung

PY - 2014/7/1

Y1 - 2014/7/1

N2 - We report the fabrication of heteroepitaxial pseudospin-valve structure using high spin polarization oxides of CoFe2O4(CFO) and La0.7Sr0.3MnO3(LSMO) as ferromagnetic electrodes. Transmission electron microscopy images revealed a 2 nm natural spacer layer at the interface between CFO and LSMO, which decoupled the two layers and permitted the observation of spin-valve effect. These heteroepitaxial spin-valve junctions showed positive magnetoresistive behavior, although CFO and LSMO are known to possess opposite spin polarization coefficients. We suggest that the abnormal magnetoresistive behavior originates from the change of spin polarization coefficient arising from the barrier layer. Our results demonstrated that naturally formed interfacial layers provide a simple route for fabricating all-oxide-based spin-valve junctions.

AB - We report the fabrication of heteroepitaxial pseudospin-valve structure using high spin polarization oxides of CoFe2O4(CFO) and La0.7Sr0.3MnO3(LSMO) as ferromagnetic electrodes. Transmission electron microscopy images revealed a 2 nm natural spacer layer at the interface between CFO and LSMO, which decoupled the two layers and permitted the observation of spin-valve effect. These heteroepitaxial spin-valve junctions showed positive magnetoresistive behavior, although CFO and LSMO are known to possess opposite spin polarization coefficients. We suggest that the abnormal magnetoresistive behavior originates from the change of spin polarization coefficient arising from the barrier layer. Our results demonstrated that naturally formed interfacial layers provide a simple route for fabricating all-oxide-based spin-valve junctions.

KW - Ferrites

KW - magnetoresistance (MR)

KW - spacerless junction

UR - http://www.scopus.com/inward/record.url?scp=84957543582&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2013.2296503

DO - 10.1109/TMAG.2013.2296503

M3 - Journal article

SN - 0018-9464

VL - 50

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 7

M1 - 6851308

ER -

Magnetoresistance of Manganite-Cobalt Ferrite Spacerless Junctions

Abstract

Keywords

ASJC Scopus subject areas

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