Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

X. L. Wang; P. S. Ku; Q. Shao; W. F. Cheng; Chi Wah Leung; A. Ruotolo

doi:10.1063/1.4834795

Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

X. L. Wang
, P. S. Ku
, Q. Shao
, W. F. Cheng
, Chi Wah Leung
, A. Ruotolo

Research output: Journal article publication › Journal article › Academic research › peer-review

28 Citations (Scopus)

Abstract

We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.

Original language	English
Article number	223508
Journal	Applied Physics Letters
Volume	103
Issue number	22
DOIs	https://doi.org/10.1063/1.4834795
Publication status	Published - 25 Nov 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4834795

http://hdl.handle.net/10397/18801

Cite this

@article{7748f173e6e34027befafcf59df1fbbc,

title = "Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO",

abstract = "We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.",

author = "Wang, \{X. L.\} and Ku, \{P. S.\} and Q. Shao and Cheng, \{W. F.\} and Leung, \{Chi Wah\} and A. Ruotolo",

year = "2013",

month = nov,

day = "25",

doi = "10.1063/1.4834795",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

AU - Wang, X. L.

AU - Ku, P. S.

AU - Shao, Q.

AU - Cheng, W. F.

AU - Leung, Chi Wah

AU - Ruotolo, A.

PY - 2013/11/25

Y1 - 2013/11/25

N2 - We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.

AB - We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.

UR - https://www.scopus.com/pages/publications/84888618130

U2 - 10.1063/1.4834795

DO - 10.1063/1.4834795

M3 - Journal article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223508

ER -

Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

Abstract

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