Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

X. L. Wang; P. S. Ku; Q. Shao; W. F. Cheng; Chi Wah Leung; A. Ruotolo

doi:10.1063/1.4834795

Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

X. L. Wang, P. S. Ku, Q. Shao, W. F. Cheng, Chi Wah Leung, A. Ruotolo

Research output: Journal article publication › Journal article › Academic research › peer-review

28 Citations (Scopus)

Abstract

We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.

Original language	English
Article number	223508
Journal	Applied Physics Letters
Volume	103
Issue number	22
DOIs	https://doi.org/10.1063/1.4834795
Publication status	Published - 25 Nov 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4834795

http://hdl.handle.net/10397/18801

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abstract = "We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.",

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AU - Leung, Chi Wah

AU - Ruotolo, A.

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N2 - We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.

AB - We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.

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Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

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