Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

X. L. Wang, P. S. Ku, Q. Shao, W. F. Cheng, Chi Wah Leung, A. Ruotolo

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Abstract

We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.
Original languageEnglish
Article number223508
JournalApplied Physics Letters
Volume103
Issue number22
DOIs
Publication statusPublished - 25 Nov 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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