Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

X. H. Ji; Shu Ping Lau; Siu Fung Yu; T. S. Herng; H. Y. Yang; S. Y. Tang; A. Sedhain; J. Y. Lin; H. X. Jiang

doi:10.1109/INEC.2008.4585470

Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

X. H. Ji
, Shu Ping Lau
, Siu Fung Yu
, T. S. Herng
, H. Y. Yang
, S. Y. Tang
, A. Sedhain
, J. Y. Lin
, H. X. Jiang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.

Original language	English
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	206-209
Number of pages	4
DOIs	https://doi.org/10.1109/INEC.2008.4585470
Publication status	Published - 1 Oct 2008
Externally published	Yes
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: 24 Mar 2008 → 27 Mar 2008

Conference

Conference	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country/Territory	China
City	Shanghai
Period	24/03/08 → 27/03/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INEC.2008.4585470

Cite this

@inproceedings{8120c97aa5704a2bb470d8bc2d4b6ddb,

title = "Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods",

abstract = "The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.",

author = "Ji, \{X. H.\} and Lau, \{Shu Ping\} and Yu, \{Siu Fung\} and Herng, \{T. S.\} and Yang, \{H. Y.\} and Tang, \{S. Y.\} and A. Sedhain and Lin, \{J. Y.\} and Jiang, \{H. X.\}",

year = "2008",

month = oct,

day = "1",

doi = "10.1109/INEC.2008.4585470",

language = "English",

isbn = "9781424415731",

pages = "206--209",

booktitle = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

note = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 ; Conference date: 24-03-2008 Through 27-03-2008",

}

Ji, XH, Lau, SP , Yu, SF, Herng, TS, Yang, HY, Tang, SY, Sedhain, A, Lin, JY & Jiang, HX 2008, Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585470, pp. 206-209, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 24/03/08. https://doi.org/10.1109/INEC.2008.4585470

Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods. / Ji, X. H.; Lau, Shu Ping ; Yu, Siu Fung et al.
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 206-209 4585470.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

AU - Ji, X. H.

AU - Lau, Shu Ping

AU - Yu, Siu Fung

AU - Herng, T. S.

AU - Yang, H. Y.

AU - Tang, S. Y.

AU - Sedhain, A.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2008/10/1

Y1 - 2008/10/1

N2 - The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.

AB - The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.

UR - https://www.scopus.com/pages/publications/52649142169

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DO - 10.1109/INEC.2008.4585470

M3 - Conference article published in proceeding or book

SN - 9781424415731

SP - 206

EP - 209

BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Y2 - 24 March 2008 through 27 March 2008

ER -

Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

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