Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

X. H. Ji; Shu Ping Lau; Siu Fung Yu; T. S. Herng; H. Y. Yang; S. Y. Tang; A. Sedhain; J. Y. Lin; H. X. Jiang

doi:10.1109/INEC.2008.4585470

Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

X. H. Ji, Shu Ping Lau, Siu Fung Yu, T. S. Herng, H. Y. Yang, S. Y. Tang, A. Sedhain, J. Y. Lin, H. X. Jiang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.

Original language	English
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	206-209
Number of pages	4
DOIs	https://doi.org/10.1109/INEC.2008.4585470
Publication status	Published - 1 Oct 2008
Externally published	Yes
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: 24 Mar 2008 → 27 Mar 2008

Conference

Conference	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country/Territory	China
City	Shanghai
Period	24/03/08 → 27/03/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INEC.2008.4585470

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@inproceedings{8120c97aa5704a2bb470d8bc2d4b6ddb,

title = "Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods",

abstract = "The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.",

author = "Ji, {X. H.} and Lau, {Shu Ping} and Yu, {Siu Fung} and Herng, {T. S.} and Yang, {H. Y.} and Tang, {S. Y.} and A. Sedhain and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2008",

month = oct,

day = "1",

doi = "10.1109/INEC.2008.4585470",

language = "English",

isbn = "9781424415731",

pages = "206--209",

booktitle = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

note = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 ; Conference date: 24-03-2008 Through 27-03-2008",

}

Ji, XH, Lau, SP , Yu, SF, Herng, TS, Yang, HY, Tang, SY, Sedhain, A, Lin, JY & Jiang, HX 2008, Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585470, pp. 206-209, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 24/03/08. https://doi.org/10.1109/INEC.2008.4585470

Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods. / Ji, X. H.; Lau, Shu Ping ; Yu, Siu Fung et al.
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 206-209 4585470.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

AU - Ji, X. H.

AU - Lau, Shu Ping

AU - Yu, Siu Fung

AU - Herng, T. S.

AU - Yang, H. Y.

AU - Tang, S. Y.

AU - Sedhain, A.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2008/10/1

Y1 - 2008/10/1

N2 - The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.

AB - The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ∼3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.

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M3 - Conference article published in proceeding or book

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EP - 209

BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Y2 - 24 March 2008 through 27 March 2008

ER -

Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

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