Low-voltage otft-based H2sensor fabricated on vacuum tape

Bochang Li; P. T. Lai; Wing Man Tang

doi:10.1109/EDSSC.2017.8333238

Low-voltage otft-based H₂sensor fabricated on vacuum tape

Bochang Li, P. T. Lai, Wing Man Tang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

A low-voltage hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with Pd source and drain (S/D) electrodes is fabricated on vacuum tape with a maximum temperature of 200 °C. The flexible sensor shows a clear decrease in drain current when exposed to H2in air at room temperature. Owing to reduced carrier mobility and increased S/D series resistance (both induced by the expansion of the Pd electrodes after absorbing hydrogen), rapid and concentration-dependent response of the OTFT is realized at various H2concentrations ranging from 200 ppm to 15,000 ppm.

Original language	English
Title of host publication	EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Publisher	IEEE
Pages	1-2
Number of pages	2
Volume	2017-January
ISBN (Electronic)	9781538629079
DOIs	https://doi.org/10.1109/EDSSC.2017.8333238
Publication status	Published - 1 Dec 2017
Event	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Zyxel Auditorium and Learning Resource Center, National Tsing Hua University, Hsinchu, Taiwan Duration: 18 Oct 2017 → 20 Oct 2017

Conference

Conference	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
Country/Territory	Taiwan
City	Hsinchu
Period	18/10/17 → 20/10/17

Keywords

flexible electronics
H sensor 2
OTFT

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2017.8333238

Cite this

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title = "Low-voltage otft-based H2sensor fabricated on vacuum tape",

abstract = "A low-voltage hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with Pd source and drain (S/D) electrodes is fabricated on vacuum tape with a maximum temperature of 200 °C. The flexible sensor shows a clear decrease in drain current when exposed to H2in air at room temperature. Owing to reduced carrier mobility and increased S/D series resistance (both induced by the expansion of the Pd electrodes after absorbing hydrogen), rapid and concentration-dependent response of the OTFT is realized at various H2concentrations ranging from 200 ppm to 15,000 ppm.",

keywords = "flexible electronics, H sensor 2, OTFT",

author = "Bochang Li and Lai, {P. T.} and Tang, {Wing Man}",

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doi = "10.1109/EDSSC.2017.8333238",

language = "English",

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booktitle = "EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits",

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Li, B, Lai, PT & Tang, WM 2017, Low-voltage otft-based H₂sensor fabricated on vacuum tape. in EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. vol. 2017-January, IEEE, pp. 1-2, 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017, Hsinchu, Taiwan, 18/10/17. https://doi.org/10.1109/EDSSC.2017.8333238

Low-voltage otft-based H₂sensor fabricated on vacuum tape. / Li, Bochang; Lai, P. T.; Tang, Wing Man.

EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Vol. 2017-January IEEE, 2017. p. 1-2.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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N2 - A low-voltage hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with Pd source and drain (S/D) electrodes is fabricated on vacuum tape with a maximum temperature of 200 °C. The flexible sensor shows a clear decrease in drain current when exposed to H2in air at room temperature. Owing to reduced carrier mobility and increased S/D series resistance (both induced by the expansion of the Pd electrodes after absorbing hydrogen), rapid and concentration-dependent response of the OTFT is realized at various H2concentrations ranging from 200 ppm to 15,000 ppm.

AB - A low-voltage hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with Pd source and drain (S/D) electrodes is fabricated on vacuum tape with a maximum temperature of 200 °C. The flexible sensor shows a clear decrease in drain current when exposed to H2in air at room temperature. Owing to reduced carrier mobility and increased S/D series resistance (both induced by the expansion of the Pd electrodes after absorbing hydrogen), rapid and concentration-dependent response of the OTFT is realized at various H2concentrations ranging from 200 ppm to 15,000 ppm.

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