Low-Voltage, Optoelectronic CH3NH3PbI3−xClxMemory with Integrated Sensing and Logic Operations

Feichi Zhou, Yanghui Liu, Xinpeng Shen, Mengye Wang, Fang Yuan, Yang Chai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

81 Citations (Scopus)

Abstract

Nonvolatile optoelectronic memories integrated with the functions of sensing, data storage, and data processing are promising for the potential Internet of things (IoT) applications. To meet the requirements of IoT devices, multifunctional memory devices with low power consumption and secure data storage are highly desirable. This study demonstrates an optoelectronic resistive switching memory integrated with sensing and logic operations by adopting organic–inorganic hybrid CH 3NH 3PbI 3− xCl x perovskites, which possess unusual defect physics and excellent light absorption. The CH 3NH 3PbI 3− xCl x cell exhibits low operation voltage of 0.1 V with the assistance of light illumination, long-term retention property, and multiple resistance states. Its unique optoelectronic characteristics enable to perform logic operation for inputting one electrical pulse and one optical signal, and detect the coincidence of electrical and optical signal as well. This design provides possibilities for smart sensor in IoT application.

Original languageEnglish
Article number1800080
JournalAdvanced Functional Materials
Volume28
Issue number15
DOIs
Publication statusPublished - 11 Apr 2018

Keywords

  • coincidence detection
  • logic operations
  • optoelectronic memory
  • perovskite
  • resistive switching memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

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