Low-voltage high driving capability CMOS buffer used in MEMS interface circuits

Yajun Ha; M. F. Li; Ai Qun Liu

doi:10.1109/ICECS.1999.814410

Low-voltage high driving capability CMOS buffer used in MEMS interface circuits

Yajun Ha, M. F. Li, Ai Qun Liu

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

3 Citations (Scopus)

Abstract

A class-AB low voltage high driving capability CMOS buffer amplifier using improved quasi-complementary output stage and error amplifiers with adaptive loads is developed. Improved quasi-complementary output stage makes it more suitable for low voltage applications, while adaptive load in error amplifier is used to increase the driving capability and reduce the sensitivity of the quiescent current to process variation. The circuit has been fabricated in 0.8 μm CMOS process. With 300 Ω load in a ± 1.5 V supply, its output swing is 2.42 V. The mean value of quiescent current for eight samples is 204 μA, with the worst deviation of 17%.

Original language	English
Title of host publication	Proceedings of ICECS 1999 - 6th IEEE International Conference on Electronics, Circuits and Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1313-1316
Number of pages	4
ISBN (Electronic)	0780356829
DOIs	https://doi.org/10.1109/ICECS.1999.814410
Publication status	Published - Sept 1999
Externally published	Yes
Event	6th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1999 - Pafos, Cyprus Duration: 5 Sept 1999 → 8 Sept 1999

Publication series

Name	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume	3

Conference

Conference	6th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1999
Country/Territory	Cyprus
City	Pafos
Period	5/09/99 → 8/09/99

ASJC Scopus subject areas

Electrical and Electronic Engineering

More information

10.1109/ICECS.1999.814410

Cite this

Ha, Y., Li, M. F., & Liu, A. Q. (1999). Low-voltage high driving capability CMOS buffer used in MEMS interface circuits. In Proceedings of ICECS 1999 - 6th IEEE International Conference on Electronics, Circuits and Systems (pp. 1313-1316). Article 814410 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.1999.814410

Ha, Yajun ; Li, M. F. ; Liu, Ai Qun. / Low-voltage high driving capability CMOS buffer used in MEMS interface circuits. Proceedings of ICECS 1999 - 6th IEEE International Conference on Electronics, Circuits and Systems. Institute of Electrical and Electronics Engineers Inc., 1999. pp. 1313-1316 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems).

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abstract = "A class-AB low voltage high driving capability CMOS buffer amplifier using improved quasi-complementary output stage and error amplifiers with adaptive loads is developed. Improved quasi-complementary output stage makes it more suitable for low voltage applications, while adaptive load in error amplifier is used to increase the driving capability and reduce the sensitivity of the quiescent current to process variation. The circuit has been fabricated in 0.8 μm CMOS process. With 300 Ω load in a ± 1.5 V supply, its output swing is 2.42 V. The mean value of quiescent current for eight samples is 204 μA, with the worst deviation of 17%.",

author = "Yajun Ha and Li, {M. F.} and Liu, {Ai Qun}",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 6th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1999 ; Conference date: 05-09-1999 Through 08-09-1999",

year = "1999",

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doi = "10.1109/ICECS.1999.814410",

language = "English",

series = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",

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Ha, Y, Li, MF & Liu, AQ 1999, Low-voltage high driving capability CMOS buffer used in MEMS interface circuits. in Proceedings of ICECS 1999 - 6th IEEE International Conference on Electronics, Circuits and Systems., 814410, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, vol. 3, Institute of Electrical and Electronics Engineers Inc., pp. 1313-1316, 6th IEEE International Conference on Electronics, Circuits and Systems, ICECS 1999, Pafos, Cyprus, 5/09/99. https://doi.org/10.1109/ICECS.1999.814410

Low-voltage high driving capability CMOS buffer used in MEMS interface circuits. / Ha, Yajun; Li, M. F.; Liu, Ai Qun.
Proceedings of ICECS 1999 - 6th IEEE International Conference on Electronics, Circuits and Systems. Institute of Electrical and Electronics Engineers Inc., 1999. p. 1313-1316 814410 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 3).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AB - A class-AB low voltage high driving capability CMOS buffer amplifier using improved quasi-complementary output stage and error amplifiers with adaptive loads is developed. Improved quasi-complementary output stage makes it more suitable for low voltage applications, while adaptive load in error amplifier is used to increase the driving capability and reduce the sensitivity of the quiescent current to process variation. The circuit has been fabricated in 0.8 μm CMOS process. With 300 Ω load in a ± 1.5 V supply, its output swing is 2.42 V. The mean value of quiescent current for eight samples is 204 μA, with the worst deviation of 17%.

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Ha Y, Li MF, Liu AQ. Low-voltage high driving capability CMOS buffer used in MEMS interface circuits. In Proceedings of ICECS 1999 - 6th IEEE International Conference on Electronics, Circuits and Systems. Institute of Electrical and Electronics Engineers Inc. 1999. p. 1313-1316. 814410. (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems). doi: 10.1109/ICECS.1999.814410

Low-voltage high driving capability CMOS buffer used in MEMS interface circuits

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