Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2and ultra high-k gate dielectric PZT

Changjian Zhou, Xinsheng Wang, Salahuddin Raju, Ziyuan Lin, Daniel Villaroman, Baoling Huang, Helen Lai Wa Chan, Mansun Chan, Yang Chai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

94 Citations (Scopus)

Abstract

MoS2and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ∼1.1 nm has been obtained by using ultra high-k gate dielectric Pb(Zr0.52Ti0.48)O3. The low threshold voltage (<0.5 V) is comparable to that of the liquid/gel gated MoS2transistor. The small sub-threshold swing of 85.9 mV dec-1, the high ON/OFF ratio of ∼108and the negligible hysteresis ensure a high performance of the MoS2transistor operating at 1 V. The extracted field-effect mobility of 1-10 cm2V-1s-1suggests a high crystalline quality of the CVD-grown MoS2flakes. The combination of the two-dimensional layered semiconductor and the ultra high-k dielectric may enable the development of low-power electronic applications. This journal is
Original languageEnglish
Pages (from-to)8695-8700
Number of pages6
JournalNanoscale
Volume7
Issue number19
DOIs
Publication statusPublished - 21 May 2015

ASJC Scopus subject areas

  • Materials Science(all)

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