Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure

S. C. Su, H. Zhu, L. X. Zhang, M. He, L. Z. Zhao, Siu Fung Yu, J. N. Wang, F. C.C. Ling

Research output: Journal article publicationJournal articleAcademic researchpeer-review

19 Citations (Scopus)

Abstract

ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with plasma assisted molecular epitaxy on c-plane sapphire, with their optical properties and optical pumped lasing characteristics studied. Due to the good crystalline quality, the lasing threshold of the MQW is ∼20 kW cm-2. The widths of the narrow well (NW) and the wide well (WW) of the ADQW were chosen to fascinate rapid LO phonon assisted carrier tunneling from NW to WW, so as to enhance the exciton density at the WW. Very low lasing threshold of 6 kW cm-2has been achieved.
Original languageEnglish
Article number131104
JournalApplied Physics Letters
Volume103
Issue number13
DOIs
Publication statusPublished - 23 Sep 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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