Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure

S. C. Su; H. Zhu; L. X. Zhang; M. He; L. Z. Zhao; Siu Fung Yu; J. N. Wang; F. C.C. Ling

doi:10.1063/1.4822265

Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure

S. C. Su, H. Zhu, L. X. Zhang, M. He, L. Z. Zhao, Siu Fung Yu, J. N. Wang, F. C.C. Ling

Research output: Journal article publication › Journal article › Academic research › peer-review

24 Citations (Scopus)

Abstract

ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with plasma assisted molecular epitaxy on c-plane sapphire, with their optical properties and optical pumped lasing characteristics studied. Due to the good crystalline quality, the lasing threshold of the MQW is ∼20 kW cm-2. The widths of the narrow well (NW) and the wide well (WW) of the ADQW were chosen to fascinate rapid LO phonon assisted carrier tunneling from NW to WW, so as to enhance the exciton density at the WW. Very low lasing threshold of 6 kW cm-2has been achieved.

Original language	English
Article number	131104
Journal	Applied Physics Letters
Volume	103
Issue number	13
DOIs	https://doi.org/10.1063/1.4822265
Publication status	Published - 23 Sept 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4822265

http://hdl.handle.net/10397/8426

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title = "Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure",

abstract = "ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with plasma assisted molecular epitaxy on c-plane sapphire, with their optical properties and optical pumped lasing characteristics studied. Due to the good crystalline quality, the lasing threshold of the MQW is ∼20 kW cm-2. The widths of the narrow well (NW) and the wide well (WW) of the ADQW were chosen to fascinate rapid LO phonon assisted carrier tunneling from NW to WW, so as to enhance the exciton density at the WW. Very low lasing threshold of 6 kW cm-2has been achieved.",

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AU - Su, S. C.

AU - Zhu, H.

AU - Zhang, L. X.

AU - He, M.

AU - Zhao, L. Z.

AU - Yu, Siu Fung

AU - Wang, J. N.

AU - Ling, F. C.C.

PY - 2013/9/23

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N2 - ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with plasma assisted molecular epitaxy on c-plane sapphire, with their optical properties and optical pumped lasing characteristics studied. Due to the good crystalline quality, the lasing threshold of the MQW is ∼20 kW cm-2. The widths of the narrow well (NW) and the wide well (WW) of the ADQW were chosen to fascinate rapid LO phonon assisted carrier tunneling from NW to WW, so as to enhance the exciton density at the WW. Very low lasing threshold of 6 kW cm-2has been achieved.

AB - ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with plasma assisted molecular epitaxy on c-plane sapphire, with their optical properties and optical pumped lasing characteristics studied. Due to the good crystalline quality, the lasing threshold of the MQW is ∼20 kW cm-2. The widths of the narrow well (NW) and the wide well (WW) of the ADQW were chosen to fascinate rapid LO phonon assisted carrier tunneling from NW to WW, so as to enhance the exciton density at the WW. Very low lasing threshold of 6 kW cm-2has been achieved.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 131104

ER -

Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure

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