TY - JOUR
T1 - Low-temperature-poling awakened high dielectric breakdown strength and outstanding improvement of discharge energy density of (Pb,La)(Zr,Sn,Ti)O3 relaxor thin film
AU - Peng, Biaolin
AU - Tang, Silin
AU - Lu, Li
AU - Zhang, Qi
AU - Huang, Haitao
AU - Bai, Gang
AU - Miao, Lei
AU - Zou, Bingsuo
AU - Liu, Laijun
AU - Sun, Wenhong
AU - Wang, Zhong Lin
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China ( 51402196 ), the Guangxi Natural Science Foundation (Grants 2016GXNSFCB380006 , 2017GXNSFFA198015 ), National Key Research and Development Program of China (No. 2017YFE9128000 ), the light of the Western China visiting scholar program , and the financial support from the program of China Scholarships Council .
Publisher Copyright:
© 2020 Elsevier Ltd
PY - 2020/11
Y1 - 2020/11
N2 - Ferroelectric thin films possessing high dielectric breakdown strength (DBS) are attractive materials employed to satisfy the requirements of miniaturization and integration of electronic components, especially for dielectric capacitors with large discharge energy density (W). In this work, it is demonstrated for the first time that high DBS in ferroelectric thin film can be awakened by a low-temperature-poling method. Mn-doped Pb0.97La0.02(Zr0.905Sn0.015Ti0.08)O3 (PLZST) relaxor thin films were prepared by using a sol-gel method, as when poled at near liquid nitrogen temperature, its DBS and W at room temperature are greatly enhanced (nearly doubled) from 1286 kV/cm to 2000 kV/cm, and from 16.6 J/cm3 to 31.2 J/cm3, respectively. The high ordering of defect dipoles during the low-temperature-poling process is responsible for the great enhancement of the awakened DBS and the outstanding improvement of the W. It concludes that the low-temperature-poling method can provide a new alternative strategy to strength the DBS and thus to improve the electrical performances of ferroelectric materials for the applications required strong electric fields in many fields, especially for dielectric energy storage, electrocaloric cooling, and energy harvesting, etc.
AB - Ferroelectric thin films possessing high dielectric breakdown strength (DBS) are attractive materials employed to satisfy the requirements of miniaturization and integration of electronic components, especially for dielectric capacitors with large discharge energy density (W). In this work, it is demonstrated for the first time that high DBS in ferroelectric thin film can be awakened by a low-temperature-poling method. Mn-doped Pb0.97La0.02(Zr0.905Sn0.015Ti0.08)O3 (PLZST) relaxor thin films were prepared by using a sol-gel method, as when poled at near liquid nitrogen temperature, its DBS and W at room temperature are greatly enhanced (nearly doubled) from 1286 kV/cm to 2000 kV/cm, and from 16.6 J/cm3 to 31.2 J/cm3, respectively. The high ordering of defect dipoles during the low-temperature-poling process is responsible for the great enhancement of the awakened DBS and the outstanding improvement of the W. It concludes that the low-temperature-poling method can provide a new alternative strategy to strength the DBS and thus to improve the electrical performances of ferroelectric materials for the applications required strong electric fields in many fields, especially for dielectric energy storage, electrocaloric cooling, and energy harvesting, etc.
KW - Defect dipoles
KW - Dielectric breakdown strength
KW - Energy storage
KW - Low-temperature-poling
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=85089497639&partnerID=8YFLogxK
U2 - 10.1016/j.nanoen.2020.105132
DO - 10.1016/j.nanoen.2020.105132
M3 - Journal article
AN - SCOPUS:85089497639
SN - 2211-2855
VL - 77
JO - Nano Energy
JF - Nano Energy
M1 - 105132
ER -
