Low Temperature Deposition of Zinc Oxide Films

H. W. Lee; Y. G. Wang; Shu Ping Lau; B. K. Tay

Low Temperature Deposition of Zinc Oxide Films

H. W. Lee, Y. G. Wang, Shu Ping Lau, B. K. Tay

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O 2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied, For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10 -3 Ωcm, and that for Aldoped films was 8×10 -4 Ωcm. The carrier concentration was found to increase with Al doping.

Original language	English
Pages (from-to)	207-212
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	763
Publication status	Published - 8 Dec 2003
Externally published	Yes
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States Duration: 22 Apr 2003 → 25 Apr 2003

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{c492d45e73894f1bb60223d800a9bb86,

title = "Low Temperature Deposition of Zinc Oxide Films",

abstract = "A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O 2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied, For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10 -3 Ωcm, and that for Aldoped films was 8×10 -4 Ωcm. The carrier concentration was found to increase with Al doping.",

author = "Lee, {H. W.} and Wang, {Y. G.} and Lau, {Shu Ping} and Tay, {B. K.}",

year = "2003",

month = dec,

day = "8",

language = "English",

volume = "763",

pages = "207--212",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics ; Conference date: 22-04-2003 Through 25-04-2003",

}

TY - JOUR

T1 - Low Temperature Deposition of Zinc Oxide Films

AU - Lee, H. W.

AU - Wang, Y. G.

AU - Lau, Shu Ping

AU - Tay, B. K.

PY - 2003/12/8

Y1 - 2003/12/8

N2 - A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O 2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied, For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10 -3 Ωcm, and that for Aldoped films was 8×10 -4 Ωcm. The carrier concentration was found to increase with Al doping.

AB - A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O 2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied, For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10 -3 Ωcm, and that for Aldoped films was 8×10 -4 Ωcm. The carrier concentration was found to increase with Al doping.

UR - http://www.scopus.com/inward/record.url?scp=0344496670&partnerID=8YFLogxK

M3 - Conference article

SN - 0272-9172

VL - 763

SP - 207

EP - 212

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics

Y2 - 22 April 2003 through 25 April 2003

ER -

Low Temperature Deposition of Zinc Oxide Films

Abstract

ASJC Scopus subject areas

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