Low Temperature Deposition of Zinc Oxide Films

H. W. Lee, Y. G. Wang, Shu Ping Lau, B. K. Tay

Research output: Journal article publicationConference articleAcademic researchpeer-review

Abstract

A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O 2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied, For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10 -3 Ωcm, and that for Aldoped films was 8×10 -4 Ωcm. The carrier concentration was found to increase with Al doping.
Original languageEnglish
Pages (from-to)207-212
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume763
Publication statusPublished - 8 Dec 2003
Externally publishedYes
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States
Duration: 22 Apr 200325 Apr 2003

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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