Abstract
We demonstrated the integration of carbon nanotubes (CNTs) as the contact plug to the Si MOSFET. A Ti silicide contact layer was introduced between the CNTs and the Si. The open-ended CNT tip connected the metal one on the other end. We study the contact resistivity of the CNT contact plug using the cross-bridge Kelvin test structure, and compare with the W contact plug. The CNT contact plug also showed excellent thermal stability. The electrical and thermal behavior is closely related to the intermediate layer between the CNT and the Si.
| Original language | English |
|---|---|
| Pages (from-to) | 811-813 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 30 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 14 Jul 2009 |
| Externally published | Yes |
Keywords
- Carbon nanotube (CNT)
- Contacts
- Interconnection
- Plug
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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