Low-resistance carbon nanotube contact plug to silicon

Yang Chai, Zhiyong Xiao, Philip Ching Ho Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)


We demonstrated the integration of carbon nanotubes (CNTs) as the contact plug to the Si MOSFET. A Ti silicide contact layer was introduced between the CNTs and the Si. The open-ended CNT tip connected the metal one on the other end. We study the contact resistivity of the CNT contact plug using the cross-bridge Kelvin test structure, and compare with the W contact plug. The CNT contact plug also showed excellent thermal stability. The electrical and thermal behavior is closely related to the intermediate layer between the CNT and the Si.
Original languageEnglish
Pages (from-to)811-813
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - 14 Jul 2009
Externally publishedYes


  • Carbon nanotube (CNT)
  • Contacts
  • Interconnection
  • Plug

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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