Abstract
We demonstrated the integration of carbon nanotubes (CNTs) as the contact plug to the Si MOSFET. A Ti silicide contact layer was introduced between the CNTs and the Si. The open-ended CNT tip connected the metal one on the other end. We study the contact resistivity of the CNT contact plug using the cross-bridge Kelvin test structure, and compare with the W contact plug. The CNT contact plug also showed excellent thermal stability. The electrical and thermal behavior is closely related to the intermediate layer between the CNT and the Si.
Original language | English |
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Pages (from-to) | 811-813 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 8 |
DOIs | |
Publication status | Published - 14 Jul 2009 |
Externally published | Yes |
Keywords
- Carbon nanotube (CNT)
- Contacts
- Interconnection
- Plug
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials