Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO

Menghan Jia, Fang Wang, Libin Tang, Jinzhong Xiang, Kar Seng Teng, Shu Ping Lau, Yanfei Lü

Research output: Journal article publicationJournal articleAcademic researchpeer-review

13 Citations (Scopus)


Ultraviolet (UV) photodetector has found extensive applications, ranging from optical communication to ozone sensing. Wide bandgap metal oxide heterostructures have gained significant interest in the development of UV photodetectors due to their excellent electronic and optical properties, as well as ease of fabrication. However, there are surface and interface issues at these heterostructures that have detrimental effects on device performance. In this work, UV photodetector consisting of p-NiO/SiO2/n-ZnO heterostructure was prepared by RF magnetron sputtering method. The device exhibited remarkable performances, such as having a rectification ratio of 57, responsivity (R) of 5.77 AW−1, external quantum efficiency (EQE) of 1.96 × 103% and rise time of 0.048 s at a low power consumption of −0.1 V under 365 nm UV irradiation. This work demonstrated a method for low-cost fabrication of photodetectors with rectification behavior and at low power consumption.

Original languageEnglish
Article number108634
JournalOptics and Laser Technology
Publication statusPublished - Jan 2023


  • Heterostructure
  • Low power consumption
  • Metal oxide semiconductor
  • UV photodetector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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