Low-loss lateral micromachined switches for high frequency applications

A. Q. Liu; M. Tang; A. Agarwal; A. Alphones

doi:10.1088/0960-1317/15/1/023

Low-loss lateral micromachined switches for high frequency applications

A. Q. Liu, M. Tang, A. Agarwal, A. Alphones

Research output: Journal article publication › Journal article › Academic research › peer-review

52 Citations (Scopus)

Abstract

Two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported. These switches are implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam. It is demonstrated that the insertion loss of the switch is less than 0.2 dB up to 15 GHz and the isolation is higher than 20 dB up to 25 GHz. An RF model of the switches is used to analyse the effects of the switch design parameters and RF performance. The optimization of the switch mechanical design is discussed where the threshold voltage can be lower than 25 V. The lateral switches are fabricated by deep reactive ion etching (DRIE) process on a silicon-on-insulator (SOI) wafer with shadow mask technology.

Original language	English
Pages (from-to)	157-167
Number of pages	11
Journal	Journal of Micromechanics and Microengineering
Volume	15
Issue number	1
DOIs	https://doi.org/10.1088/0960-1317/15/1/023
Publication status	Published - Jan 2005
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

More information

10.1088/0960-1317/15/1/023

Cite this

@article{7dd0bd4f071045838100f90f11f48724,

title = "Low-loss lateral micromachined switches for high frequency applications",

abstract = "Two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported. These switches are implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam. It is demonstrated that the insertion loss of the switch is less than 0.2 dB up to 15 GHz and the isolation is higher than 20 dB up to 25 GHz. An RF model of the switches is used to analyse the effects of the switch design parameters and RF performance. The optimization of the switch mechanical design is discussed where the threshold voltage can be lower than 25 V. The lateral switches are fabricated by deep reactive ion etching (DRIE) process on a silicon-on-insulator (SOI) wafer with shadow mask technology.",

author = "Liu, {A. Q.} and M. Tang and A. Agarwal and A. Alphones",

year = "2005",

month = jan,

doi = "10.1088/0960-1317/15/1/023",

language = "English",

volume = "15",

pages = "157--167",

journal = "Journal of Micromechanics and Microengineering",

issn = "0960-1317",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Low-loss lateral micromachined switches for high frequency applications

AU - Liu, A. Q.

AU - Tang, M.

AU - Agarwal, A.

AU - Alphones, A.

PY - 2005/1

Y1 - 2005/1

N2 - Two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported. These switches are implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam. It is demonstrated that the insertion loss of the switch is less than 0.2 dB up to 15 GHz and the isolation is higher than 20 dB up to 25 GHz. An RF model of the switches is used to analyse the effects of the switch design parameters and RF performance. The optimization of the switch mechanical design is discussed where the threshold voltage can be lower than 25 V. The lateral switches are fabricated by deep reactive ion etching (DRIE) process on a silicon-on-insulator (SOI) wafer with shadow mask technology.

AB - Two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported. These switches are implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam. It is demonstrated that the insertion loss of the switch is less than 0.2 dB up to 15 GHz and the isolation is higher than 20 dB up to 25 GHz. An RF model of the switches is used to analyse the effects of the switch design parameters and RF performance. The optimization of the switch mechanical design is discussed where the threshold voltage can be lower than 25 V. The lateral switches are fabricated by deep reactive ion etching (DRIE) process on a silicon-on-insulator (SOI) wafer with shadow mask technology.

UR - http://www.scopus.com/inward/record.url?scp=12344256731&partnerID=8YFLogxK

U2 - 10.1088/0960-1317/15/1/023

DO - 10.1088/0960-1317/15/1/023

M3 - Journal article

AN - SCOPUS:12344256731

SN - 0960-1317

VL - 15

SP - 157

EP - 167

JO - Journal of Micromechanics and Microengineering

JF - Journal of Micromechanics and Microengineering

IS - 1

ER -

Low-loss lateral micromachined switches for high frequency applications

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this