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Low-Loss 800nm-Thick PECVD Silicon Nitride Photonic Platform on 300-mm Wafer

  • Hong Cai
  • , Bo Li
  • , Yiding Lin
  • , Haitao Yu
  • , Steven Hou Jang Lee
  • , Chin Khang Tew
  • , Jae Ok Yoo
  • , Charmaine Goh
  • , Shervonne Woon
  • , Doris Keh Ting Ng
  • , Navab Singh
  • , Xianshu Luo
  • , Lennon Yao Ting Lee

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

In this paper we demonstrate the development and optimization of an 800 nm-thick Plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) photonic platform on a 300-mm silicon wafer. The implementation of ArF immersion lithography contributes to superior manufacturing processes, as it provides excellent critical dimension (CD) uniformity inter- and intra-wafers, make it an optimal platform of production of integrated circuits and nanoscale devices.

Original languageEnglish
Title of host publicationAdvanced Fabrication Technologies for Micro/Nano Optics and Photonics XVII
EditorsGeorg von Freymann, Eva Blasco, Debashis Chanda
PublisherSPIE
ISBN (Electronic)9781510670563
DOIs
Publication statusPublished - Mar 2024
EventAdvanced Fabrication Technologies for Micro/Nano Optics and Photonics XVII 2024 - San Francisco, United States
Duration: 28 Jan 202431 Jan 2024

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume12898
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceAdvanced Fabrication Technologies for Micro/Nano Optics and Photonics XVII 2024
Country/TerritoryUnited States
CitySan Francisco
Period28/01/2431/01/24

Keywords

  • Photonic platform
  • Photonics waveguides
  • Silicon Nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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