Low-frequency noise in laser-debonded GaN films

C. P. Chan, B. H. Leung, Y. H. Loke, Hau Chung Man, Tai Man Yue, C. Surya

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Low-frequency noise was measured from laser-debonded HVPE-grown GaN films. Substantial increase in thenoise was seen for the 5 μm thick films, indicating generation of localized states due to laser illumination. For the 20 μm thick films, low-frequency noise measured from the debonded sample is found to be similar to the control sample, indicating the material degradation is limited to the region close to the GaN-sapphire interface.
Original languageEnglish
Title of host publication2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
PublisherIEEE
Pages83-86
Number of pages4
ISBN (Electronic)0780377494, 9780780377493
DOIs
Publication statusPublished - 1 Jan 2003
EventIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - New World Renaissance Hotel, Tsimshatsui, Kowloon, Hong Kong
Duration: 16 Dec 200318 Dec 2003

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Country/TerritoryHong Kong
CityTsimshatsui, Kowloon
Period16/12/0318/12/03

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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