Low-frequency noise in laser-debonded GaN films

C. P. Chan; B. H. Leung; Y. H. Loke; Hau Chung Man; Tai Man Yue; C. Surya

doi:10.1109/EDSSC.2003.1283488

Low-frequency noise in laser-debonded GaN films

C. P. Chan, B. H. Leung, Y. H. Loke, Hau Chung Man, Tai Man Yue, C. Surya

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

Low-frequency noise was measured from laser-debonded HVPE-grown GaN films. Substantial increase in thenoise was seen for the 5 μm thick films, indicating generation of localized states due to laser illumination. For the 20 μm thick films, low-frequency noise measured from the debonded sample is found to be similar to the control sample, indicating the material degradation is limited to the region close to the GaN-sapphire interface.

Original language	English
Title of host publication	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Publisher	IEEE
Pages	83-86
Number of pages	4
ISBN (Electronic)	0780377494, 9780780377493
DOIs	https://doi.org/10.1109/EDSSC.2003.1283488
Publication status	Published - 1 Jan 2003
Event	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - New World Renaissance Hotel, Tsimshatsui, Kowloon, Hong Kong Duration: 16 Dec 2003 → 18 Dec 2003

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Country/Territory	Hong Kong
City	Tsimshatsui, Kowloon
Period	16/12/03 → 18/12/03

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/EDSSC.2003.1283488

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title = "Low-frequency noise in laser-debonded GaN films",

abstract = "Low-frequency noise was measured from laser-debonded HVPE-grown GaN films. Substantial increase in thenoise was seen for the 5 μm thick films, indicating generation of localized states due to laser illumination. For the 20 μm thick films, low-frequency noise measured from the debonded sample is found to be similar to the control sample, indicating the material degradation is limited to the region close to the GaN-sapphire interface.",

author = "Chan, {C. P.} and Leung, {B. H.} and Loke, {Y. H.} and Man, {Hau Chung} and Yue, {Tai Man} and C. Surya",

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doi = "10.1109/EDSSC.2003.1283488",

language = "English",

pages = "83--86",

booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

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Chan, CP, Leung, BH, Loke, YH, Man, HC, Yue, TM & Surya, C 2003, Low-frequency noise in laser-debonded GaN films. in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283488, IEEE, pp. 83-86, IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Tsimshatsui, Kowloon, Hong Kong, 16/12/03. https://doi.org/10.1109/EDSSC.2003.1283488

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AU - Yue, Tai Man

AU - Surya, C.

PY - 2003/1/1

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N2 - Low-frequency noise was measured from laser-debonded HVPE-grown GaN films. Substantial increase in thenoise was seen for the 5 μm thick films, indicating generation of localized states due to laser illumination. For the 20 μm thick films, low-frequency noise measured from the debonded sample is found to be similar to the control sample, indicating the material degradation is limited to the region close to the GaN-sapphire interface.

AB - Low-frequency noise was measured from laser-debonded HVPE-grown GaN films. Substantial increase in thenoise was seen for the 5 μm thick films, indicating generation of localized states due to laser illumination. For the 20 μm thick films, low-frequency noise measured from the debonded sample is found to be similar to the control sample, indicating the material degradation is limited to the region close to the GaN-sapphire interface.

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M3 - Conference article published in proceeding or book

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BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

PB - IEEE

T2 - IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

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Low-frequency noise in laser-debonded GaN films

Abstract

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