Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

H. M. Yau, Z. B. Yan, N. Y. Chan, K. Au, C. M. Wong, Chi Wah Leung, F. Y. Zhang, X. S. Gao, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

18 Citations (Scopus)

Abstract

Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.
Original languageEnglish
Article number12826
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 4 Aug 2015

ASJC Scopus subject areas

  • General

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