Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

H. M. Yau; Z. B. Yan; N. Y. Chan; K. Au; C. M. Wong; Chi Wah Leung; F. Y. Zhang; X. S. Gao; Jiyan Dai

doi:10.1038/srep12826

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

H. M. Yau, Z. B. Yan, N. Y. Chan, K. Au, C. M. Wong, Chi Wah Leung, F. Y. Zhang, X. S. Gao, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

23 Citations (Scopus)

Abstract

Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO₃/La_0.7Sr_0.3MnO₃ with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

Original language	English
Article number	12826
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep12826
Publication status	Published - 4 Aug 2015

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10.1038/srep12826

http://hdl.handle.net/10397/11236

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title = "Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions",

abstract = "Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.",

author = "Yau, {H. M.} and Yan, {Z. B.} and Chan, {N. Y.} and K. Au and Wong, {C. M.} and Leung, {Chi Wah} and Zhang, {F. Y.} and Gao, {X. S.} and Jiyan Dai",

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AU - Yau, H. M.

AU - Yan, Z. B.

AU - Chan, N. Y.

AU - Au, K.

AU - Wong, C. M.

AU - Leung, Chi Wah

AU - Zhang, F. Y.

AU - Gao, X. S.

AU - Dai, Jiyan

PY - 2015/8/4

Y1 - 2015/8/4

N2 - Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

AB - Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

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M3 - Journal article

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VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 12826

ER -

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

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