Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions

Y. F. Chong; K. L. Pey; Y. F. Lu; A. T.S. Wee; T. Osipowicz; H. L. Seng; A. See; Jiyan Dai

doi:10.1063/1.1323549

Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p⁺/n junctions

Y. F. Chong, K. L. Pey, Y. F. Lu, A. T.S. Wee, T. Osipowicz, H. L. Seng, A. See, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

18 Citations (Scopus)

Abstract

We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing.

Original language	English
Pages (from-to)	2994-2996
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	19
DOIs	https://doi.org/10.1063/1.1323549
Publication status	Published - 6 Nov 2000
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1323549

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title = "Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions",

abstract = "We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing.",

author = "Chong, {Y. F.} and Pey, {K. L.} and Lu, {Y. F.} and Wee, {A. T.S.} and T. Osipowicz and Seng, {H. L.} and A. See and Jiyan Dai",

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T1 - Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions

AU - Chong, Y. F.

AU - Pey, K. L.

AU - Lu, Y. F.

AU - Wee, A. T.S.

AU - Osipowicz, T.

AU - Seng, H. L.

AU - See, A.

AU - Dai, Jiyan

PY - 2000/11/6

Y1 - 2000/11/6

N2 - We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing.

AB - We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing.

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DO - 10.1063/1.1323549

M3 - Journal article

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EP - 2996

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p⁺/n junctions

Abstract

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