Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions

Y. F. Chong, K. L. Pey, Y. F. Lu, A. T.S. Wee, T. Osipowicz, H. L. Seng, A. See, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

14 Citations (Scopus)


We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing.
Original languageEnglish
Pages (from-to)2994-2996
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 6 Nov 2000
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this