Linearity study of multiple independent gate field effect transistor (MIGFET) under symmetric and asymmetric operations

Jing Feng Gong; Philip Ching Ho Chan

doi:10.1016/j.sse.2007.08.010

Linearity study of multiple independent gate field effect transistor (MIGFET) under symmetric and asymmetric operations

Jing Feng Gong, Philip Ching Ho Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

7 Citations (Scopus)

Abstract

In this paper, we investigate the linearity of undoped body multi-gate independent FinFET (MIGFET) experimentally. The MIGFET device with sub-50 nm body thickness is fabricated on SOI wafers. The device transconductance and its high order derivatives under different bias conditions are measured. RF two-tone inter-modulation distortion measurements are performed. Both the DC and RF measurements demonstrate that the properly biased asymmetric MIGFET provides better linearity performance than that of symmetric MIGFET biased at the conventional moderate inversion linearity "sweet spot". The improved linearity is explained.

Original language	English
Pages (from-to)	259-263
Number of pages	5
Journal	Solid-State Electronics
Volume	52
Issue number	2
DOIs	https://doi.org/10.1016/j.sse.2007.08.010
Publication status	Published - 1 Feb 2008
Externally published	Yes

Keywords

Asymmetric
IMD3
Linearity
MIGFET
Symmetric

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

More information

10.1016/j.sse.2007.08.010

Cite this

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abstract = "In this paper, we investigate the linearity of undoped body multi-gate independent FinFET (MIGFET) experimentally. The MIGFET device with sub-50 nm body thickness is fabricated on SOI wafers. The device transconductance and its high order derivatives under different bias conditions are measured. RF two-tone inter-modulation distortion measurements are performed. Both the DC and RF measurements demonstrate that the properly biased asymmetric MIGFET provides better linearity performance than that of symmetric MIGFET biased at the conventional moderate inversion linearity {"}sweet spot{"}. The improved linearity is explained.",

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N2 - In this paper, we investigate the linearity of undoped body multi-gate independent FinFET (MIGFET) experimentally. The MIGFET device with sub-50 nm body thickness is fabricated on SOI wafers. The device transconductance and its high order derivatives under different bias conditions are measured. RF two-tone inter-modulation distortion measurements are performed. Both the DC and RF measurements demonstrate that the properly biased asymmetric MIGFET provides better linearity performance than that of symmetric MIGFET biased at the conventional moderate inversion linearity "sweet spot". The improved linearity is explained.

AB - In this paper, we investigate the linearity of undoped body multi-gate independent FinFET (MIGFET) experimentally. The MIGFET device with sub-50 nm body thickness is fabricated on SOI wafers. The device transconductance and its high order derivatives under different bias conditions are measured. RF two-tone inter-modulation distortion measurements are performed. Both the DC and RF measurements demonstrate that the properly biased asymmetric MIGFET provides better linearity performance than that of symmetric MIGFET biased at the conventional moderate inversion linearity "sweet spot". The improved linearity is explained.

KW - Asymmetric

KW - IMD3

KW - Linearity

KW - MIGFET

KW - Symmetric

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 2

ER -

Linearity study of multiple independent gate field effect transistor (MIGFET) under symmetric and asymmetric operations

Abstract

Keywords

ASJC Scopus subject areas

More information

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