Linearity study of multiple independent gate field effect transistor (MIGFET) under symmetric and asymmetric operations

Jing Feng Gong, Philip Ching Ho Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)


In this paper, we investigate the linearity of undoped body multi-gate independent FinFET (MIGFET) experimentally. The MIGFET device with sub-50 nm body thickness is fabricated on SOI wafers. The device transconductance and its high order derivatives under different bias conditions are measured. RF two-tone inter-modulation distortion measurements are performed. Both the DC and RF measurements demonstrate that the properly biased asymmetric MIGFET provides better linearity performance than that of symmetric MIGFET biased at the conventional moderate inversion linearity "sweet spot". The improved linearity is explained.
Original languageEnglish
Pages (from-to)259-263
Number of pages5
JournalSolid-State Electronics
Issue number2
Publication statusPublished - 1 Feb 2008
Externally publishedYes


  • Asymmetric
  • IMD3
  • Linearity
  • Symmetric

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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