Leakage current of (Ba0.5Sr0.5)TiO3thin film prepared by pulsed-laser deposition

Feng Yan, Helen L.W. Chan, Chung Loong Choy, Wenbing Wu, Yening Wang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)

Abstract

The leakage current and relative permittivity of (Ba0.5Sr0.5)TiO3(BST) thin films prepared by pulsed-laser deposition (PLD) were investigated. It was found that the leakage current for positive bias voltage was higher than that for negative bias voltage, which was attributed to the lattice mismatch between the bottom Pt electrode and the BST thin film. A time-dependent breakdown process under positive voltage was observed, which was interpreted as the increase of the internal electric field in the film near the bottom electrode. However, the internal electric field decreased and could eventually be recovered by applying negative bias voltage.
Original languageEnglish
Pages (from-to)200-203
Number of pages4
JournalThin Solid Films
Volume406
Issue number1-2
DOIs
Publication statusPublished - 10 Mar 2002

Keywords

  • (BaSr)TiO 3
  • Electrical properties and measurements
  • Interfaces
  • Schottky barrier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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