Leakage current of (Ba0.5Sr0.5)TiO3thin film prepared by pulsed-laser deposition

Feng Yan; Helen L.W. Chan; Chung Loong Choy; Wenbing Wu; Yening Wang

doi:10.1016/S0040-6090(01)01788-6

Leakage current of (Ba_0.5Sr_0.5)TiO₃thin film prepared by pulsed-laser deposition

Feng Yan, Helen L.W. Chan, Chung Loong Choy, Wenbing Wu, Yening Wang

Research output: Journal article publication › Journal article › Academic research › peer-review

6 Citations (Scopus)

Abstract

The leakage current and relative permittivity of (Ba0.5Sr0.5)TiO3(BST) thin films prepared by pulsed-laser deposition (PLD) were investigated. It was found that the leakage current for positive bias voltage was higher than that for negative bias voltage, which was attributed to the lattice mismatch between the bottom Pt electrode and the BST thin film. A time-dependent breakdown process under positive voltage was observed, which was interpreted as the increase of the internal electric field in the film near the bottom electrode. However, the internal electric field decreased and could eventually be recovered by applying negative bias voltage.

Original language	English
Pages (from-to)	200-203
Number of pages	4
Journal	Thin Solid Films
Volume	406
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(01)01788-6
Publication status	Published - 10 Mar 2002

Keywords

(BaSr)TiO 3
Electrical properties and measurements
Interfaces
Schottky barrier

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

More information

10.1016/S0040-6090(01)01788-6

Cite this

@article{5eda43e0d85a40c6a9a7de7b4097a32a,

title = "Leakage current of (Ba0.5Sr0.5)TiO3thin film prepared by pulsed-laser deposition",

abstract = "The leakage current and relative permittivity of (Ba0.5Sr0.5)TiO3(BST) thin films prepared by pulsed-laser deposition (PLD) were investigated. It was found that the leakage current for positive bias voltage was higher than that for negative bias voltage, which was attributed to the lattice mismatch between the bottom Pt electrode and the BST thin film. A time-dependent breakdown process under positive voltage was observed, which was interpreted as the increase of the internal electric field in the film near the bottom electrode. However, the internal electric field decreased and could eventually be recovered by applying negative bias voltage.",

keywords = "(BaSr)TiO 3, Electrical properties and measurements, Interfaces, Schottky barrier",

author = "Feng Yan and Chan, {Helen L.W.} and Choy, {Chung Loong} and Wenbing Wu and Yening Wang",

year = "2002",

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T1 - Leakage current of (Ba0.5Sr0.5)TiO3thin film prepared by pulsed-laser deposition

AU - Yan, Feng

AU - Chan, Helen L.W.

AU - Choy, Chung Loong

AU - Wu, Wenbing

AU - Wang, Yening

PY - 2002/3/10

Y1 - 2002/3/10

N2 - The leakage current and relative permittivity of (Ba0.5Sr0.5)TiO3(BST) thin films prepared by pulsed-laser deposition (PLD) were investigated. It was found that the leakage current for positive bias voltage was higher than that for negative bias voltage, which was attributed to the lattice mismatch between the bottom Pt electrode and the BST thin film. A time-dependent breakdown process under positive voltage was observed, which was interpreted as the increase of the internal electric field in the film near the bottom electrode. However, the internal electric field decreased and could eventually be recovered by applying negative bias voltage.

AB - The leakage current and relative permittivity of (Ba0.5Sr0.5)TiO3(BST) thin films prepared by pulsed-laser deposition (PLD) were investigated. It was found that the leakage current for positive bias voltage was higher than that for negative bias voltage, which was attributed to the lattice mismatch between the bottom Pt electrode and the BST thin film. A time-dependent breakdown process under positive voltage was observed, which was interpreted as the increase of the internal electric field in the film near the bottom electrode. However, the internal electric field decreased and could eventually be recovered by applying negative bias voltage.

KW - (BaSr)TiO 3

KW - Electrical properties and measurements

KW - Interfaces

KW - Schottky barrier

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U2 - 10.1016/S0040-6090(01)01788-6

DO - 10.1016/S0040-6090(01)01788-6

M3 - Journal article

SN - 0040-6090

VL - 406

SP - 200

EP - 203

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -