Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film

F. Tong; J. D. Liu; X. M. Cheng; Jianhua Hao; G. Y. Gao; H. Tong; X. S. Miao

doi:10.1016/j.tsf.2014.08.006

Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film

F. Tong
, J. D. Liu
, X. M. Cheng
, Jianhua Hao
, G. Y. Gao
, H. Tong
, X. S. Miao

Research output: Journal article publication › Journal article › Academic research › peer-review

2 Citations (Scopus)

Abstract

Wereport that the lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin films by pulsed laser deposition. The single-crystal substrates of MgO and BaF2are designed to match the lattice of lowtemperature a-GeTe phase and high-temperature β-GeTe phase, respectively. The structures of deposited GeTe films show lattice-match dependence rather than temperature dependence. Raman analysis indicates that the a-GeTe to β-GeTe ferroelectric phase transition accompanies an increase of local six-coordinated Ge atoms, which is analogous to the phase transition from amorphous to crystalline for memory application.

Original language	English
Pages (from-to)	70-73
Number of pages	4
Journal	Thin Solid Films
Volume	568
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2014.08.006
Publication status	Published - 1 Jan 2014

Keywords

Chalcogenide
Lattice strain
Pulsed laser deposition
Transmission electron microscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2014.08.006

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@article{8750ccfc25744ca7b144742ea9350166,

title = "Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film",

abstract = "Wereport that the lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin films by pulsed laser deposition. The single-crystal substrates of MgO and BaF2are designed to match the lattice of lowtemperature a-GeTe phase and high-temperature β-GeTe phase, respectively. The structures of deposited GeTe films show lattice-match dependence rather than temperature dependence. Raman analysis indicates that the a-GeTe to β-GeTe ferroelectric phase transition accompanies an increase of local six-coordinated Ge atoms, which is analogous to the phase transition from amorphous to crystalline for memory application.",

keywords = "Chalcogenide, Lattice strain, Pulsed laser deposition, Transmission electron microscopy",

author = "F. Tong and Liu, \{J. D.\} and Cheng, \{X. M.\} and Jianhua Hao and Gao, \{G. Y.\} and H. Tong and Miao, \{X. S.\}",

year = "2014",

month = jan,

day = "1",

doi = "10.1016/j.tsf.2014.08.006",

language = "English",

volume = "568",

pages = "70--73",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film

AU - Tong, F.

AU - Liu, J. D.

AU - Cheng, X. M.

AU - Hao, Jianhua

AU - Gao, G. Y.

AU - Tong, H.

AU - Miao, X. S.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Wereport that the lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin films by pulsed laser deposition. The single-crystal substrates of MgO and BaF2are designed to match the lattice of lowtemperature a-GeTe phase and high-temperature β-GeTe phase, respectively. The structures of deposited GeTe films show lattice-match dependence rather than temperature dependence. Raman analysis indicates that the a-GeTe to β-GeTe ferroelectric phase transition accompanies an increase of local six-coordinated Ge atoms, which is analogous to the phase transition from amorphous to crystalline for memory application.

AB - Wereport that the lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin films by pulsed laser deposition. The single-crystal substrates of MgO and BaF2are designed to match the lattice of lowtemperature a-GeTe phase and high-temperature β-GeTe phase, respectively. The structures of deposited GeTe films show lattice-match dependence rather than temperature dependence. Raman analysis indicates that the a-GeTe to β-GeTe ferroelectric phase transition accompanies an increase of local six-coordinated Ge atoms, which is analogous to the phase transition from amorphous to crystalline for memory application.

KW - Chalcogenide

KW - Lattice strain

KW - Pulsed laser deposition

KW - Transmission electron microscopy

UR - https://www.scopus.com/pages/publications/84922459482

U2 - 10.1016/j.tsf.2014.08.006

DO - 10.1016/j.tsf.2014.08.006

M3 - Journal article

SN - 0040-6090

VL - 568

SP - 70

EP - 73

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film

Abstract

Keywords

ASJC Scopus subject areas

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