Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film

F. Tong, J. D. Liu, X. M. Cheng, Jianhua Hao, G. Y. Gao, H. Tong, X. S. Miao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

Wereport that the lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin films by pulsed laser deposition. The single-crystal substrates of MgO and BaF2are designed to match the lattice of lowtemperature a-GeTe phase and high-temperature β-GeTe phase, respectively. The structures of deposited GeTe films show lattice-match dependence rather than temperature dependence. Raman analysis indicates that the a-GeTe to β-GeTe ferroelectric phase transition accompanies an increase of local six-coordinated Ge atoms, which is analogous to the phase transition from amorphous to crystalline for memory application.
Original languageEnglish
Pages (from-to)70-73
Number of pages4
JournalThin Solid Films
Volume568
Issue number1
DOIs
Publication statusPublished - 1 Jan 2014

Keywords

  • Chalcogenide
  • Lattice strain
  • Pulsed laser deposition
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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