Lateral carrier domain magnetometer in SOI technology

Jack Lau; Cuong T. Nguyen; Ping K. Ko; Philip Ching Ho Chan

doi:10.1109/16.543018

Lateral carrier domain magnetometer in SOI technology

Jack Lau
, Cuong T. Nguyen
, Ping K. Ko
, Philip Ching Ho Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

1 Citation (Scopus)

Abstract

We report here a lateral magnetometer based on the carrier domain effect. For the ease of integration, silicon-based magnetic sensors are often researched. The Vertical Carrier Domain Magnetometer (VCDM), reported some time ago, achieves a high sensitivity based on carrier domain effects and on internal positive feedback. Unfortunately, the VCDM is not practical. We report here a Lateral Carrier Domain Magnetometer built on SOI that solves the problems faced by the VCDM. MEDICI simulation shows the formation of a carrier domain. We fabricated the device using a 6-mask process on BESOI wafer. The device is probed on wafer with a specially made magnetic chuck that can generate up to 200 Gauss. The LCDM achieves a relative sensitivity of 12.5%/Tesla.

Original language	English
Pages (from-to)	1851-1856
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	43
Issue number	11
DOIs	https://doi.org/10.1109/16.543018
Publication status	Published - 1 Nov 1996
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)

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10.1109/16.543018

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title = "Lateral carrier domain magnetometer in SOI technology",

abstract = "We report here a lateral magnetometer based on the carrier domain effect. For the ease of integration, silicon-based magnetic sensors are often researched. The Vertical Carrier Domain Magnetometer (VCDM), reported some time ago, achieves a high sensitivity based on carrier domain effects and on internal positive feedback. Unfortunately, the VCDM is not practical. We report here a Lateral Carrier Domain Magnetometer built on SOI that solves the problems faced by the VCDM. MEDICI simulation shows the formation of a carrier domain. We fabricated the device using a 6-mask process on BESOI wafer. The device is probed on wafer with a specially made magnetic chuck that can generate up to 200 Gauss. The LCDM achieves a relative sensitivity of 12.5\%/Tesla.",

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N2 - We report here a lateral magnetometer based on the carrier domain effect. For the ease of integration, silicon-based magnetic sensors are often researched. The Vertical Carrier Domain Magnetometer (VCDM), reported some time ago, achieves a high sensitivity based on carrier domain effects and on internal positive feedback. Unfortunately, the VCDM is not practical. We report here a Lateral Carrier Domain Magnetometer built on SOI that solves the problems faced by the VCDM. MEDICI simulation shows the formation of a carrier domain. We fabricated the device using a 6-mask process on BESOI wafer. The device is probed on wafer with a specially made magnetic chuck that can generate up to 200 Gauss. The LCDM achieves a relative sensitivity of 12.5%/Tesla.

AB - We report here a lateral magnetometer based on the carrier domain effect. For the ease of integration, silicon-based magnetic sensors are often researched. The Vertical Carrier Domain Magnetometer (VCDM), reported some time ago, achieves a high sensitivity based on carrier domain effects and on internal positive feedback. Unfortunately, the VCDM is not practical. We report here a Lateral Carrier Domain Magnetometer built on SOI that solves the problems faced by the VCDM. MEDICI simulation shows the formation of a carrier domain. We fabricated the device using a 6-mask process on BESOI wafer. The device is probed on wafer with a specially made magnetic chuck that can generate up to 200 Gauss. The LCDM achieves a relative sensitivity of 12.5%/Tesla.

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ER -

Lateral carrier domain magnetometer in SOI technology

Abstract

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