Lateral carrier domain magnetometer in SOI technology

Jack Lau, Cuong T. Nguyen, Ping K. Ko, Philip Ching Ho Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)


We report here a lateral magnetometer based on the carrier domain effect. For the ease of integration, silicon-based magnetic sensors are often researched. The Vertical Carrier Domain Magnetometer (VCDM), reported some time ago, achieves a high sensitivity based on carrier domain effects and on internal positive feedback. Unfortunately, the VCDM is not practical. We report here a Lateral Carrier Domain Magnetometer built on SOI that solves the problems faced by the VCDM. MEDICI simulation shows the formation of a carrier domain. We fabricated the device using a 6-mask process on BESOI wafer. The device is probed on wafer with a specially made magnetic chuck that can generate up to 200 Gauss. The LCDM achieves a relative sensitivity of 12.5%/Tesla.
Original languageEnglish
Pages (from-to)1851-1856
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 1 Nov 1996
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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