TY - GEN
T1 - Laser Integration on Silicon through Flip-chip Bonding with Efficient Coupling
AU - Chi, Ting Ta
AU - Li, Nanxi
AU - Cai, Hong
AU - Li, Zhenyu
AU - Tobing, Landobasa Y.M.
AU - Yu, Haitao
AU - Lee, Lennon Y.T.
AU - Lee, Wen
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022/12
Y1 - 2022/12
N2 - Integrated silicon photonics technology has wide applications including communication and sensing. It enables high-capacity data transmission in modern communication systems. In the meanwhile, light source integration on silicon remains to be a challenge to overcome. To achieve laser integration on silicon photonics platform with efficient coupling, in this work, a concept for integration of semiconductor laser on silicon wafer through flip-chip bonding with precise control on vertical direction (Z direction) is proposed. High vertical alignment precision of ± 50 nm can be obtained by a developed selective etching process using an etch stop layer. Furthermore, by using a multi-tip edge coupler, the horizontal misalignment tolerance with flip-chip bonded laser can be improved, with an estimated 1-dB horizontal misalignment tolerance of 0.6\ \mum obtained from calculation at 1310 nm (O-band). The work paves the way towards efficient electronic-photonic heterogeneous integration.
AB - Integrated silicon photonics technology has wide applications including communication and sensing. It enables high-capacity data transmission in modern communication systems. In the meanwhile, light source integration on silicon remains to be a challenge to overcome. To achieve laser integration on silicon photonics platform with efficient coupling, in this work, a concept for integration of semiconductor laser on silicon wafer through flip-chip bonding with precise control on vertical direction (Z direction) is proposed. High vertical alignment precision of ± 50 nm can be obtained by a developed selective etching process using an etch stop layer. Furthermore, by using a multi-tip edge coupler, the horizontal misalignment tolerance with flip-chip bonded laser can be improved, with an estimated 1-dB horizontal misalignment tolerance of 0.6\ \mum obtained from calculation at 1310 nm (O-band). The work paves the way towards efficient electronic-photonic heterogeneous integration.
UR - http://www.scopus.com/inward/record.url?scp=85147411485&partnerID=8YFLogxK
U2 - 10.1109/EPTC56328.2022.10013178
DO - 10.1109/EPTC56328.2022.10013178
M3 - Conference article published in proceeding or book
AN - SCOPUS:85147411485
T3 - Proceedings of the 24th Electronics Packaging Technology Conference, EPTC 2022
SP - 138
EP - 141
BT - Proceedings of the 24th Electronics Packaging Technology Conference, EPTC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th Electronics Packaging Technology Conference, EPTC 2022
Y2 - 7 December 2022 through 9 December 2022
ER -