Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases

Biaolin Peng, Qi Zhang, Xing Li, Tieyu Sun, Huiqing Fan, Shanming Ke, Mao Ye, Yu Wang, Wei Lu, Hanben Niu, Xierong Zeng, Haitao Huang

Research output: Journal article publicationJournal articleAcademic researchpeer-review


A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm3 along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented).
Original languageEnglish
Pages (from-to)13512-13517
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number24
Publication statusPublished - 24 Jun 2015


  • antiferroelectric
  • energy storage
  • relaxor
  • sol-gel
  • textured

ASJC Scopus subject areas

  • Materials Science(all)

Cite this