Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases

Biaolin Peng; Qi Zhang; Xing Li; Tieyu Sun; Huiqing Fan; Shanming Ke; Mao Ye; Yu Wang; Wei Lu; Hanben Niu; Xierong Zeng; Haitao Huang

doi:10.1021/acsami.5b02790

Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb_0.8Ba_0.2ZrO₃ Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases

Biaolin Peng, Qi Zhang, Xing Li, Tieyu Sun, Huiqing Fan, Shanming Ke, Mao Ye, Yu Wang, Wei Lu, Hanben Niu, Xierong Zeng, Haitao Huang

Research output: Journal article publication › Journal article › Academic research › peer-review

202 Citations (Scopus)

Abstract

A highly textured (111)-oriented Pb_0.8Ba_0.2ZrO₃ (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiO_x/SiO₂/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm³ along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented).

Original language	English
Pages (from-to)	13512-13517
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	7
Issue number	24
DOIs	https://doi.org/10.1021/acsami.5b02790
Publication status	Published - 24 Jun 2015

Keywords

antiferroelectric
energy storage
relaxor
sol-gel
textured

ASJC Scopus subject areas

General Materials Science

More information

10.1021/acsami.5b02790

Cite this

Peng, B., Zhang, Q., Li, X., Sun, T., Fan, H., Ke, S., Ye, M., Wang, Y., Lu, W., Niu, H., Zeng, X., & Huang, H. (2015). Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb_0.8Ba_0.2ZrO₃ Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases. ACS Applied Materials and Interfaces, 7(24), 13512-13517. https://doi.org/10.1021/acsami.5b02790

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title = "Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases",

abstract = "A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm3 along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented).",

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author = "Biaolin Peng and Qi Zhang and Xing Li and Tieyu Sun and Huiqing Fan and Shanming Ke and Mao Ye and Yu Wang and Wei Lu and Hanben Niu and Xierong Zeng and Haitao Huang",

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month = jun,

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doi = "10.1021/acsami.5b02790",

language = "English",

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Peng, B, Zhang, Q, Li, X, Sun, T, Fan, H, Ke, S, Ye, M, Wang, Y, Lu, W, Niu, H, Zeng, X & Huang, H 2015, 'Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb_0.8Ba_0.2ZrO₃ Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases', ACS Applied Materials and Interfaces, vol. 7, no. 24, pp. 13512-13517. https://doi.org/10.1021/acsami.5b02790

Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb_0.8Ba_0.2ZrO₃ Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases. / Peng, Biaolin; Zhang, Qi; Li, Xing et al.
In: ACS Applied Materials and Interfaces, Vol. 7, No. 24, 24.06.2015, p. 13512-13517.

Research output: Journal article publication › Journal article › Academic research › peer-review

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AU - Zhang, Qi

AU - Li, Xing

AU - Sun, Tieyu

AU - Fan, Huiqing

AU - Ke, Shanming

AU - Ye, Mao

AU - Wang, Yu

AU - Lu, Wei

AU - Niu, Hanben

AU - Zeng, Xierong

AU - Huang, Haitao

PY - 2015/6/24

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N2 - A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm3 along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented).

AB - A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm3 along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range (Graph Presented).

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