Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field

Xi Chen, Jie Min Zhan, Yok Sheung Li, Xian Rong Cen

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)

Abstract

In the present study, a simulation of large diameter industrial Czochralski Si crystal growth is carried out using a combination of 2D axisymmetric global and 3D local models. The 2D global steady simulation is performed to obtain the thermal boundary conditions on the external wall of the crucible holder for 3D transient simulation under TMF. In the 3D model, the large eddy simulation (LES) turbulence model is adopted to obtain more accurate melt convection. The computed temperature distribution on the crucible wall agrees quite well with that from DNS simulation as well as experimental results in the absence of a magnetic field or with a vertical magnetic field. In order to clarify the effect of a transverse magnetic field (TMF), three different magnetic field intensities are used for simulation. The melt flow structures and temperature fluctuations under TMF are presented. The vortices at the corners of the crucible wall in the presence of weak or moderate magnetic field would not exist if axisymmetric thermal boundary conditions are used in the 3D model. The damping effect of TMF is also studied.
Original languageEnglish
Pages (from-to)60-67
Number of pages8
JournalJournal of Crystal Growth
Volume389
DOIs
Publication statusPublished - 1 Mar 2014

Keywords

  • A1. Computer simulation
  • A1. Heat transfer
  • A2. Magnetic field assisted Czochralski method
  • B2. Semiconducting silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this