Lanthanide Yb/Er co-doped semiconductor layered WSe₂nanosheets with near-infrared luminescence at telecommunication wavelengths

Atomically thin layers of transition metal dichalcogenides (TMDs) have recently drawn great attention. However, doping strategies and controlled synthesis for wafer-scale TMDs are still in their early stages, greatly hindering the construction of devices and further basic studies. In this work, we develop the fast deposition of wafer-scale layered lanthanide ion Yb/Er co-doped WSe2using pulsed laser deposition. WSe2nanosheets were chosen as the host, while Yb3+and Er3+ions served as the sensitizer and activator, respectively. The obtained Yb/Er co-doped WSe2layers exhibit good uniformity and high crystallinity with highly textured features. Under the excitation of a diode laser at 980 nm, down-conversion emission is observed at around 1540 nm, assigned to the emission transition between the4I13/2and4I15/2states of Er3+. Considering the significance of 1540 nm luminescence in the application of photonic technologies, this observation in the WSe2:Yb/Er nanosheets down to the monolayer provides a new opportunity for developing photonic devices at the 2D limit. Our work not only offers a general method to prepare wafer-scale lanthanide doped TMDs, but also to widely modulate the luminescence of atomically layered TMDs by introducing lanthanide ions.