Kinetic Monte Carlo simulation of shape transition of strained quantum dots

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Abstract

The pyramid-to-dome transition in GexSi1-xon Si(100) initiated by step formation on pyramidal quantum dots is atomistically simulated using a multistate lattice model in two-dimensions incorporating effective surface reconstructions. Under quasiequilibrium growth conditions associated with low deposition rates, the transition occurs at island size ncfollowing √ nc∼ x-1.69independent of temperature and deposition rate. The shape transition is found to be an activated process. Results are explained by a theory based on simple forms of facet energies and elastic energies estimated using a shallow island approximation. An asymptotic scaling relation nc1/d∼ x-2for x→0 applicable to d=2 or 3 dimensions is derived. The shape transition energy barrier can be dominated by the interface energy between steep and shallow facets.
Original languageEnglish
Article number064328
JournalJournal of Applied Physics
Volume108
Issue number6
DOIs
Publication statusPublished - 15 Sep 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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