Abstract
Because silicide Schottky barrier infrared detectors such as Pd2Si and PtSi can only be used for short-wavelength and medium-wavelength infrared focal plane imaging, in recent years IrSi Schottky barrier arrays have been developed for long-wavelength(8-14μm) infrared focal plane imaging. The technology of IrSi Schottky barrier is a new way to realize long-wavelength infrared imaging in large scale single chip. In this paper, the basic principles, structure, and key fabrication processes of IrSi Schottky barrier arrays were discussed. The state of the art of the devices was introduced.
| Original language | English |
|---|---|
| Pages (from-to) | 12-15 |
| Number of pages | 4 |
| Journal | Hongwai jishu |
| Volume | 15 |
| Issue number | 5 |
| Publication status | Published - 3 Oct 1993 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Engineering