Ion-sensitive properties of organic electrochemical transistors

Peng Lin, Feng Yan, Helen L.W. Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

145 Citations (Scopus)

Abstract

Ion-sensitive properties of organic electrochemical transistors (OECT) based on Poly(3,4-ethylenedioxythiophene): poly(styrene sulfonic acid) (PEDOT:PSS) have been systematically studied for the first time. It has been found that the transfer curve (IDS-VG) of an OECT shifts to lower gate voltage horizontally with the increase of the concentration of cations, including H+, K+, Na+, Ca2+, and Al3+, in the electrolyte. The gate electrode of the OECT plays an important role on its ion-sensitive properties. For devices with Ag/AgCl gate electrode, Nernstian relationships between the shift of the gate voltage and the concentrations of the cations have been obtained. For devices with metal gate electrodes, including Pt and Au, the ion sensitivity is higher than that given by the Nernst equation, which can be attributed to the interface between the metal gate and the electrolyte.
Original languageEnglish
Pages (from-to)1637-1641
Number of pages5
JournalACS Applied Materials and Interfaces
Volume2
Issue number6
DOIs
Publication statusPublished - 23 Jun 2010

Keywords

  • ion sensor
  • organic electrochemical transistor

ASJC Scopus subject areas

  • Materials Science(all)

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