ION IMPLANTATION CHARACTERISATION: A COMPARISON OF PHOTOTHERMAL RADIOMETRIC AND PHOTODISPLACEMENT THERMAL WAVE TECHNIQUES.

G. M. Crean, S. J. Sheard, C. W. See, Michael Geoffrey Somekh

Research output: Journal article publicationConference articleAcademic researchpeer-review

2 Citations (Scopus)

Abstract

The applicability of two nondestructive thermal wave techniques for ion implant monitoring, photodisplacement and photothermal radiometric microscopy is evaluated. Experimental results are presented for BF//2 implanted into single-crystal (100) silicon wafers with ion dose of 1E12-3E15 ions/cm**2) and ion energy of (50-200 keV. Using these results, the sensitivity of the above techniques to material parameters such as lattice damage, ion penetration depth and surface recombination velocity is discussed. It is shown that while no one technique is applicable to all implant characteristics, the various techniques examined are complementary and thus application specific.
Original languageEnglish
Pages (from-to)597-600
Number of pages4
JournalUltrasonics Symposium Proceedings
Publication statusPublished - 1 Dec 1987
Externally publishedYes
EventIEEE 1987 Ultrasonics Symposium, Proceedings. - Denver, CO, United States
Duration: 1 Dec 1987 → …

ASJC Scopus subject areas

  • Engineering(all)

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