The applicability of two nondestructive thermal wave techniques for ion implant monitoring, photodisplacement and photothermal radiometric microscopy is evaluated. Experimental results are presented for BF//2 implanted into single-crystal (100) silicon wafers with ion dose of 1E12-3E15 ions/cm**2) and ion energy of (50-200 keV. Using these results, the sensitivity of the above techniques to material parameters such as lattice damage, ion penetration depth and surface recombination velocity is discussed. It is shown that while no one technique is applicable to all implant characteristics, the various techniques examined are complementary and thus application specific.
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